IRF512中文資料HARRIS數(shù)據(jù)手冊PDF規(guī)格書
IRF512規(guī)格書詳情
Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching conver tors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Features
? 4.9A, and 5.6A, 80V and 100V
? rDS(ON) = 0.54? and 0.74?
? Single Pulse Avalanche Energy Rated
? SOA is Power Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
產(chǎn)品屬性
- 型號：
IRF512
- 制造商：
Rochester Electronics LLC
- 功能描述：
- Bulk
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
VBsemi |
21+ |
TO220 |
10026 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IR |
23+ |
TO220 |
3000 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售 |
詢價 | ||
HARRIS |
24+ |
35200 |
一級代理/放心采購 |
詢價 | |||
FAIRCHILD |
24+ |
TO-220AB-3 |
8866 |
詢價 | |||
VBsemi |
23+ |
TO220 |
10065 |
原裝正品,有掛有貨,假一賠十 |
詢價 | ||
IOR |
新 |
6 |
全新原裝 貨期兩周 |
詢價 | |||
IR |
21+ |
TO-220 |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價 | ||
IR |
22+ |
TO-220 |
25000 |
只做原裝進口現(xiàn)貨,專注配單 |
詢價 | ||
har |
2023+ |
原廠封裝 |
50000 |
原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-220 |
8000 |
只做原裝現(xiàn)貨 |
詢價 |
