IRF511中文資料HARRIS數據手冊PDF規(guī)格書
IRF511規(guī)格書詳情
Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching conver tors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Features
? 4.9A, and 5.6A, 80V and 100V
? rDS(ON) = 0.54? and 0.74?
? Single Pulse Avalanche Energy Rated
? SOA is Power Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
產品屬性
- 型號：
IRF511
- 制造商：
Rochester Electronics LLC
- 制造商：
Freescale Semiconductor
- 功能描述：
SUB ONLY ON SEMICONDUCTOR
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
17+ |
TO-220 |
10000 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
IR |
24+ |
TO-263 |
56000 |
公司進口原裝現貨 批量特價支持 |
詢價 | ||
SAM |
05+ |
原廠原裝 |
4866 |
只做全新原裝真實現貨供應 |
詢價 | ||
IR |
23+ |
TO-220 |
28000 |
原裝正品 |
詢價 | ||
IR |
23+ |
TO-220 |
6000 |
特價庫存 |
詢價 | ||
IR |
24+ |
TO-220-3 |
8866 |
詢價 | |||
IR |
23+ |
TO-220 |
12800 |
##公司主營品牌長期供應100%原裝現貨可含稅提供技術 |
詢價 | ||
RCA |
新 |
9 |
全新原裝 貨期兩周 |
詢價 | |||
IR |
17+ |
TO-220 |
6200 |
詢價 |
