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HS9-6617RH-T中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書

HS9-6617RH-T
廠商型號

HS9-6617RH-T

功能描述

Radiation Hardened 2K x 8 CMOS PROM

文件大小

94.36 Kbytes

頁面數(shù)量

3

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-3-30 21:15:00

人工找貨

HS9-6617RH-T價格和庫存,歡迎聯(lián)系客服免費人工找貨

HS9-6617RH-T規(guī)格書詳情

Intersil’s Satellite Applications FlowTM (SAF) devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers, while maintaining a high level of reliability.

Features

? QML Class T, Per MIL-PRF-38535

? Radiation Performance

- Gamma Dose (γ) 1 x 105 RAD(Si)

- SEU LET 16MeV/mg/cm2

- SEL LET 100MeV/mg/cm2

? Field Programmable Nicrome Fuse Links

? Low Standby Power 1.1mW Max

? Low Operating Power 137.5mW/MHz Max

? Fast Access Time 100ns Max

? TTL Compatible Inputs/Outputs

? Synchronous Operation

? On Chip Address Latches, Three-State Outputs

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