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首頁 >HT-B3803FCH>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IIRL3803	文件：338.72 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤6m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IIRL3803V	文件：339.05 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRIPTION ?Combinewiththefastswitchingspeedandruggedizeddevice design,providethedesignerwithanextremelyefficientand reliabledeviceforuseinawidevarietyofapplications. ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤5.5m? ?Enhancementmode ?Fa	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IRL3803	文件：365.66 Kbytes Page：8 Pages	PowerMOSFET(Vdss=30V,Rds(on)=0.006ohm,Id=140A?? Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p	IRF International Rectifier	IRF
IRL3803	文件：338.72 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤6m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IRL3803L	文件：436.44 Kbytes Page：10 Pages	PowerMOSFET(Vdss=30V,Rds(on)=0.006ohm,Id=140A?? Description FifthGenerationHEXFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswichingspeedandurggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provides	IRF International Rectifier	IRF
IRL3803LPBF	文件：398.23 Kbytes Page：10 Pages	HEXFET?PowerMOSFET Description FifthGenerationHEXFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswichingspeedandurggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provides	IRF International Rectifier	IRF
IRL3803LPBF	文件：402.96 Kbytes Page：11 Pages	AdvancedProcessTechnology Description FifthGenerationHEXFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswichingspeedandurggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provides	IRF International Rectifier	IRF
IRL3803PBF	文件：2.62955 Mbytes Page：9 Pages	HEXFET?PowerMOSFET	IRF International Rectifier	IRF
IRL3803PBF	文件：968.26 Kbytes Page：9 Pages	ADVANCEDPROCESSTECHNOLOGY	IRF International Rectifier	IRF
IRL3803PBF	文件：1.66 Mbytes Page：9 Pages	IRMOSFET? Description FifthGenerationHEXFETsutilizeadvancedprocessing techniquestoachieveextremelylowon-resistancepersilicon area.Thisbenefit,combinedwiththefastswitchingspeedand ruggedizeddevicedesignthatHEXFETPowerMOSFETsare wellknownfor,providesthedesignerwithanex	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IRL3803S	文件：436.44 Kbytes Page：10 Pages	PowerMOSFET(Vdss=30V,Rds(on)=0.006ohm,Id=140A?? Description FifthGenerationHEXFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswichingspeedandurggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provides	IRF International Rectifier	IRF
IRL3803S	文件：664.57 Kbytes Page：11 Pages	Logic-LevelGateDrive Description FifthGenerationHEXFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswichingspeedandurggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provides	IRF International Rectifier	IRF
IRL3803SPBF	文件：398.23 Kbytes Page：10 Pages	HEXFET?PowerMOSFET Description FifthGenerationHEXFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswichingspeedandurggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provides	IRF International Rectifier	IRF
IRL3803SPBF	文件：402.96 Kbytes Page：11 Pages	AdvancedProcessTechnology Description FifthGenerationHEXFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswichingspeedandurggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provides	IRF International Rectifier	IRF
IRL3803SPBF	文件：402.96 Kbytes Page：11 Pages	ADVANCEDPROCESSTECHNOLOGY	IRF International Rectifier	IRF
IRL3803STRL	文件：664.57 Kbytes Page：11 Pages	Logic-LevelGateDrive Description FifthGenerationHEXFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswichingspeedandurggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provides	IRF International Rectifier	IRF
IRL3803STRRPBF	文件：402.96 Kbytes Page：11 Pages	AdvancedProcessTechnology Description FifthGenerationHEXFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswichingspeedandurggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provides	IRF International Rectifier	IRF
IRL3803V	文件：135.03 Kbytes Page：8 Pages	HEXFETPowerMOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p	IRF International Rectifier	IRF
IRL3803V	文件：339.05 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRIPTION ?Combinewiththefastswitchingspeedandruggedizeddevice design,providethedesignerwithanextremelyefficientand reliabledeviceforuseinawidevarietyofapplications. ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤5.5m? ?Enhancementmode ?Fa	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IRL3803VL	文件：221.76 Kbytes Page：10 Pages	HEXFETPowerMOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p	IRF International Rectifier	IRF

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供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市河鋒鑫科技有限公司	HT-B3803FCH	HARVATEK	13+		3000		詢價
深圳市鑫煒納電子有限公司	HT-B3803FCH	HARVATEK	2022+		3000	原廠原裝,假一罰十	詢價
上海市鑫鴻達電子	HTB-38I-R	Cooper Bussmann	2022+		227	全新原裝貨期兩周	詢價
瀚佳科技(深圳)有限公司	HTB-38I-R	COOPER	24+		35200	一級代理/放心采購	詢價
深圳市易訊博科技有限公司	HTB-38I-R	Eaton	22+	NA	168	加我QQ或微信咨詢更多詳細信息,	詢價
深圳市弘揚芯城科技有限公司	HTB-38I-R	EATON(伊頓)	23+		6000	誠信服務(wù)，絕對原裝原盤	詢價
千層芯半導體(深圳)有限公司	HTB-38M	COOPER	24+	原廠原裝	1000	原裝正品	詢價
深圳市博浩通科技有限公司	HTB39C256160FF-7	QIMONDA	23+	BGA	1130	優(yōu)勢庫存	詢價
深圳市聯(lián)世界科技有限公司	HTB4002001				50	原裝正品現(xiàn)貨庫存價優(yōu)	詢價
深圳市永貝爾科技有限公司	HTB400-P	LEM	23+	NA	25060	只做進口原裝,終端工廠免費送樣	詢價

更多HT-B3803FCH供應(yīng)商更新時間2025-1-9 14:01:00

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