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HY57V641620ET-H

64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O

DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf

HynixHynix Semiconductor

海力士海力士半導體

HY57V641620HG

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

海力士海力士半導體

HY57V641620HG-I

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

海力士海力士半導體

HY57V641620HGLT-HI

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

海力士海力士半導體

HY57V641620HGLT-KI

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

海力士海力士半導體

HY57V641620HGLT-P

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

海力士海力士半導體

HY57V641620HGLT-PI

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

海力士海力士半導體

HY57V641620HGLT-SI

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

海力士海力士半導體

HY57V641620HGT-H

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

海力士海力士半導體

HY57V641620HGT-HI

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

海力士海力士半導體

詳細參數(shù)

  • 型號：

    HY57V641620ET-H

  • 制造商：

    SK Hynix Inc

  • 功能描述：

    SDRAM, 4M x 16, 54 Pin, Plastic, TSOP

供應商型號品牌批號封裝庫存備注價格
HYNIX
21/22+
TSOP54
23584
原裝正品現(xiàn)貨實單價優(yōu)
 詢價
HY
24+
TSOP
7250
絕對原裝現(xiàn)貨,價格低,歡迎詢購!
 詢價
HY
2023+
TSOP
53500
正品,原裝現(xiàn)貨
 詢價
HYNIX
24+
TSOP
625
詢價
HYNIX
2015+
SOP/DIP
19889
一級代理原裝現(xiàn)貨,特價熱賣!
 詢價
HY
06+
TSOP
1000
自己公司全新庫存絕對有貨
 詢價
HYNIX
23+
SOP
5000
原裝正品,假一罰十
 詢價
Hynix
24+
TSOP
2500
原裝現(xiàn)貨假一罰十
 詢價
HYNIX
2020+
TSOP54
206
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
HYNIX
19+
256800
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
更多HY57V641620ET-H供應商 更新時間2025-2-5 15:00:00

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