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IIRFB260N

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IIRFP260M

N-ChannelMOSFETTransistor

·DESCRITION ·HighSpeedPowerSwitching ·FEATURES ·Staticdrain-sourceon-resistance:RDS(on)≤40m? ·Enhancementmode: ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IIRFP260N

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FullyAvalancheRated ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤40m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IL260

HighSpeedFiveChannelDigitalCoupler

ETCList of Unclassifed Manufacturers

未分類制造商

IL260

HighSpeedFiveChannelDigitalCouplers

ETCList of Unclassifed Manufacturers

未分類制造商

IL260B

HighSpeedFiveChannelDigitalCoupler

ETCList of Unclassifed Manufacturers

未分類制造商

IL260B

HighSpeedFiveChannelDigitalCouplers

ETCList of Unclassifed Manufacturers

未分類制造商

IL260BE

HighSpeedFiveChannelDigitalCouplers

ETCList of Unclassifed Manufacturers

未分類制造商

IL260E

HighSpeedFiveChannelDigitalCouplers

ETCList of Unclassifed Manufacturers

未分類制造商

INA260

PrecisionDigitalCurrentandPowerMonitorwithLow-Drift,PrecisionIntegratedShunt

TI1Texas Instruments

德州儀器

INA260AIPW

PrecisionDigitalCurrentandPowerMonitorwithLow-Drift,PrecisionIntegratedShunt

TI1Texas Instruments

德州儀器

INA260AIPWR

PrecisionDigitalCurrentandPowerMonitorwithLow-Drift,PrecisionIntegratedShunt

TI1Texas Instruments

德州儀器

IQXT-260

TCXOSpecification

IQD

IQD Frequency Products Ltd

IRF260

N-ChannelPowerMOSFET

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

IRFB260

PowerMOSFET(Vdss=200V,Rds(on)max=0.040ohm,Id=56A)

SMPSMOSFET VDSSRDS(on)maxID 200V0.040?56A Benefits LowGate-to-DrainChargetoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) FullyCharacterizedAvalancheVoltageandCurrent

IRF

International Rectifier

IRFB260N

PowerMOSFET(Vdss=200V,Rds(on)max=0.040ohm,Id=56A)

SMPSMOSFET VDSSRDS(on)maxID 200V0.040?56A Benefits LowGate-to-DrainChargetoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) FullyCharacterizedAvalancheVoltageandCurrent

IRF

International Rectifier

IRFB260N

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFB260NPBF

HEXFETPowerMOSFET

Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free

IRF

International Rectifier

IRFB260NPBF

HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFI260

TRANSISTORN-CHANNEL(Vdss=200V,Rds(on)=0.060ohm,Id=45A*)

200Volt,0.060?,HEXFET HEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. HEXFETtransistorsalsofeatureallofthewell-establishedadvan

IRF

International Rectifier

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