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BD135-16

NPNPlasticEncapsulatedTransistor

FEATURES Highcurrent ComplementtoBD136,BD138andBD140

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

BD135-16

Complementarylowvoltagetransistor

Features ■Productsarepre-selectedinDCcurrentgain Application ■Generalpurpose Description Theseepitaxialplanartransistorsaremountedin theSOT-32plasticpackage.Theyaredesigned foraudioamplifiersanddriversutilizing complementaryorquasi-complementarycircuits.

STMICROELECTRONICSSTMicroelectronics

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BD135-16

NPNPlasticEncapsulatedTransistor

FEATURES ?Highcurrent ?ComplementtoBD136,BD138andBD140

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

BD135-16

Complementarylowvoltagetransistor

Description TheseepitaxialplanartransistorsaremountedintheSOT-32plasticpackage.Theyaredesignedforaudioamplifiersanddriversutilizingcomplementaryorquasi-complementarycircuits.TheNPNtypesaretheBD135andBD139,andthecomplementaryPNPtypesaretheBD136andBD140. Fe

STMICROELECTRONICSSTMicroelectronics

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BD135-16

PowerTransistorsNPNSilicon45,60,80Volts

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) ?EpoxymeetsUL94V-0flammabilityrating ?MoisureSensitivityLevel1 ?DCCurrentGain-hFE=40(Min)@IC=

MCCMicro Commercial Components

美微科美微科半導體股份有限公司

BD135-16

NPNSILICONTRANSISTORS

STMICROELECTRONICSSTMicroelectronics

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BD135-16

NPNpowertransistors

DESCRIPTION NPNpowertransistorinaTO-126;SOT32plasticpackage.PNPcomplements:BD136,BD138andBD140 FEATURES ?Highcurrent(max.1.5A) ?Lowvoltage(max.80V). APPLICATIONS ?Driverstagesinhi-fiamplifiersandtelevisioncircuits.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BD135-16

Complementarylowvoltagetransistor

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

BD135-16

NPNSILICONTRANSISTORS

NPNSiliconTransistors ForAFdriverandoutputstagesofmediumperformance

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

JCT135-16

SCRChip

JIEJIEJIEJIE MICROELECTRONICS CO.,Ltd

捷捷微電江蘇捷捷微電子股份有限公司

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