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HUF75329D3中文資料仙童半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

HUF75329D3
廠商型號(hào)

HUF75329D3

功能描述

20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs

文件大小

225.11 Kbytes

頁(yè)面數(shù)量

10 頁(yè)

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡(jiǎn)稱

Fairchild仙童半導(dǎo)體

中文名稱

飛兆/仙童半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-12-28 22:30:00

HUF75329D3規(guī)格書詳情

These N-Channel power MOSFETs are manufactured using the innovative UltraFET? process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low voltage bus switches, and power management in portable and battery-operated products.

Features

? 20A, 55V

? Simulation Models

- Temperature Compensated PSPICE? and SABER? Models

- SPICE and SABER Thermal Impedance Models

Available on the WEB at: www.fairchildsemi.com

? Peak Current vs Pulse Width Curve

? UIS Rating Curve

? Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

產(chǎn)品屬性

  • 型號(hào):

    HUF75329D3

  • 功能描述:

    MOSFET 20a 55V N-Channel UltraFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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INT
2020+
SOT-252
80000
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FAIRCHILD
24+
35200
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22+
SMD
9000
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FAIRCHILD
23+
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4500
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10000
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24+
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2022
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80000
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FAIRCHILD
20+
TO-2523L(DPAK)
36900
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23+
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9062
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INT
17+
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6200
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