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HUF75332P3中文資料仙童半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

HUF75332P3
廠商型號(hào)

HUF75332P3

功能描述

60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs

文件大小

228.25 Kbytes

頁(yè)面數(shù)量

10 頁(yè)

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡(jiǎn)稱

Fairchild仙童半導(dǎo)體

中文名稱

飛兆/仙童半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-3 22:30:00

HUF75332P3規(guī)格書詳情

These N-Channel power MOSFETs are manufactured using the innovative UltraFET? process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low voltage bus switches, and power management in portable and battery-operated products.

Features

? 60A, 55V

? Simulation Models

- Temperature Compensated PSPICE? and SABER? Models

- SPICE and SABER Thermal Impedance Models

Available on the WEB at: www.fairchildsemi.com

? Peak Current vs Pulse Width Curve

? UIS Rating Curve

? Related Literature

- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

產(chǎn)品屬性

  • 型號(hào):

    HUF75332P3

  • 功能描述:

    MOSFET 60a 55V 0.019 Ohm Logic Level N-Ch

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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F
2020+
T0-220
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
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三年內(nèi)
1983
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FAIRCHILD/仙童
24+
TO220
880000
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FAIRCHILD/仙童
21+
TO220
1709
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SMD
9000
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FAIRCHIL
TO220
68500
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FAIRCHILD
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4500
全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷售
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10000
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Fairchild/ON
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TO2203
13880
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