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IRF830

PowerFieldEffectTransistor

TMOSPOWERFET4.5AMPERES500VOLTSRDS(on)=1.5? ThisTMOSPowerFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. ?SiliconGateforFastSwitchingSpeeds ?LowRDS(on)toMinimizeOn–Loss

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

IRF830

Drives1x70WHIDlamp

Overview TheIRPLHID2Areferencedesignkitconsistsofacompleteballastsolutionfora70WHIDlamp.ThedesigncontainsanEMIfilter,lowvoltagepowersupply,activepowerfactorcorrectionandaballastcontrolcircuitusingtheIRS2573D.Thisdemoboardisintendedtohelpwiththeevalua

IRF

International Rectifier

IRF830

HighPowerFactor/LowTHD

IRF

International Rectifier

IRF830

4.5A500VNCHANNELPOWERMOSFET

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.cconverters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. TheIRF830issuppliedin

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

IRF830

PowerMOSFET

DESCRIPTION TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50W.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. FEATURES ?Dynamic

KERSEMI

Kersemi Electronic Co., Ltd.

IRF830

NCHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

FEATURE NchannelinaplasticTO220package. Theyareintendedforuseinoff-lineswitchedmodepower supplies,T.V.andcomputermonitorpowersupplies. DC-DCconverters,motorcontrolcircuitsandgeneralpurpose switchingapplications CompliancetoRoHS.

COMSET

Comset Semiconductor

IRF830

4.4A,500V,1.5廓N-CHANNELPOWERMOSFET

DESCRIPTION ?IRF830is500VHighvoltageN-Channelenhancement modepowerMOS-FETchipfabricatedinadvanced siliconepitaxialplanartechnology; ?Advancedterminationschemetoprovideenhancedvoltageblockingcapability; ?AvalancheEnergySpecified; ?Source-to-DrainDiodeRecove

FS

First Silicon Co., Ltd

IRF830

N-ChannelPowerMOSFETs,4.5A,450V/500V

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF830

N-ChannelPowerMOSFET

DESCRIPTION TheNellIRF830areN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.Theyaredesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation. Theyaredesignedasanextremelyefficientandreliabledevice

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

IRF830

N-ChannelPowerMESHMOSFET

DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAYTMprocess.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvaroussources. ●TypicalRDS(on)=1.35? ●EXTREMELYHIGHdv/dtCAPABILITY ●100AVALAN

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

詳細(xì)參數(shù)

  • 型號(hào)：

    HUR830

  • 制造商：

    SIRECTIFIER

  • 制造商全稱：

    Sirectifier Semiconductors

  • 功能描述：

    快速恢復(fù)二極管Fast Recovery Diodes，軟恢復(fù)特性高性能高結(jié)溫超快恢復(fù)外延二極管Soft Recovery Behaviour ，High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes，Tj = -55°C ~ 175°C, Tjm = 175°C。

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Essentra
22+
NA
6487
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RICHCO
新
7005
全新原裝 貨期兩周
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RICHCO
2447
SMD
100500
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RICHCO
23+
NA
12730
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RICHCO
23+
10000
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FUN-JIN
24+
DIP
2650
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FUN-JIN
23+
DIP
8560
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FUN-JIN
1815+
DIP
6528
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FUN-JIN
24+
DIP
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
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FUN-JIN
2022+
DIP
90000
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更多HUR830供應(yīng)商 更新時(shí)間2025-4-24 10:08:00

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