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零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRF830 | Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
IRF830 | POWER MOSFET GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,conveters,solenoidandrelaydrivers. FEATURES HigherCurrentRating LowerrDS(ON),LowerCapacitances LowerTotalGateCharge TighterVSD | SUNTAC Suntac Electronic Corp. | SUNTAC | |
IRF830 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description APECMOSFETprovidethepowerdesignerwiththebestcombinationoffastswitching,loweron-resistanceandreasonablecost. TheTO-220andpackageisuniversallypreferredforallcommercial-industrialapplications.Thedeviceissuitedforswitchmodepowersupplies,DC-ACconv | A-POWERAdvanced Power Electronics Corp. 富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司 | A-POWER | |
IRF830 | High current, high speed switching Description TheIRF830isanewgenerationofhighvoltageN–ChannelenhancementmodepowerMOSFETsandisobtainedthroughanextremeoptimizationlayoutdesign,inadditionaltopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapability,providesuper | SILIKRONSilikron Semiconductor Co.,LTD. 新硅能微電子新硅能微電子(蘇州)有限公司 | SILIKRON | |
IRF830 | N-channel mosfet transistor Features ?WithTO-220package ?Simpledriverequirements ?Fastswitching ?VDSS=500V;RDS(ON)≤1.5Ω;ID=4.5A ?1.gate2.drain3.source | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | |
IRF830 | TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET VDSS=500Volts RDS(on)=1.5Ohms ID=4.0Amperes Description Designedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Alsoofferadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedapplications suchaspowersupplies,PWM | DCCOM Dc Components | DCCOM | |
IRF830 | N-Channel Power MOSFETs, 4.5 A, 450 V/500 V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VGSRatedat±20V ?SiliconGateforFastSwitchi | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | |
IRF830 | Power Field Effect Transistor TMOSPOWERFET4.5AMPERES500VOLTSRDS(on)=1.5? ThisTMOSPowerFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. ?SiliconGateforFastSwitchingSpeeds ?LowRDS(on)toMinimizeOn–Loss | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
IRF830 | Drives 1 x 70W HID lamp Overview TheIRPLHID2Areferencedesignkitconsistsofacompleteballastsolutionfora70WHIDlamp.ThedesigncontainsanEMIfilter,lowvoltagepowersupply,activepowerfactorcorrectionandaballastcontrolcircuitusingtheIRS2573D.Thisdemoboardisintendedtohelpwiththeevalua | IRF International Rectifier | IRF | |
IRF830 | PowerMOS transistor Avalanche energy rated GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. FEATURES ?Repe | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | |
IRF830 | N - CHANNEL 500V - 1.35ohm - 4.5A - TO-220 PowerMESH] MOSFET DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=1.35? ■EXTREMELYHIGHdv/dtCAPABILITY ■1 | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | |
IRF830 | N-CHANNEL ENHANCEMENT MODE PowerFieldEffectTransistor N?ChannelEnhancementMode ?SiliconGateforFastSwitchingSpeeds ?LowRDS(on)toMinimizeOn?Losses,SpecifiedatElevated Temperature ?Rugged—SOAisPowerDissipationLimited ?Source?to?DrainDiodeCharacterizedforUsewithInductiveLoads | TRSYS Transys Electronics | TRSYS | |
IRF830 | N-Channel Power MOSFETs, 4.5 A, 450V/500V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VGSRatedat±20V ?SiliconGateforFastSwitchi | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | |
IRF830 | 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | Intersil Intersil Corporation | Intersil | |
IRF830 | 4.5A 500V N CHANNEL POWER MOSFET GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.cconverters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. TheIRF830issuppliedin | FCIFirst Components International 戈采戈采企業(yè)股份有限公司 | FCI | |
IRF830 | Power MOSFET DESCRIPTION TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50W.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. FEATURES ?Dynamic | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
IRF830 | N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE NchannelinaplasticTO220package. Theyareintendedforuseinoff-lineswitchedmodepower supplies,T.V.andcomputermonitorpowersupplies. DC-DCconverters,motorcontrolcircuitsandgeneralpurpose switchingapplications CompliancetoRoHS. | COMSET Comset Semiconductor | COMSET | |
IRF830 | 4.4A, 500V, 1.5廓 N-CHANNEL POWER MOSFET DESCRIPTION ?IRF830is500VHighvoltageN-Channelenhancement modepowerMOS-FETchipfabricatedinadvanced siliconepitaxialplanartechnology; ?Advancedterminationschemetoprovideenhancedvoltageblockingcapability; ?AvalancheEnergySpecified; ?Source-to-DrainDiodeRecove | FS First Silicon Co., Ltd | FS | |
IRF830 | N-Channel Power MOSFET DESCRIPTION TheNellIRF830areN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.Theyaredesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation. Theyaredesignedasanextremelyefficientandreliabledevice | NELLSEMINell Semiconductor Co., Ltd 尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司 | NELLSEMI | |
IRF830 | N-Channel PowerMESH MOSFET DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAYTMprocess.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvaroussources. ●TypicalRDS(on)=1.35? ●EXTREMELYHIGHdv/dtCAPABILITY ●100AVALAN | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | ARTSCHIP |
詳細(xì)參數(shù)
- 型號(hào):
IRF830
- 功能描述:
MOSFET N-Chan 500V 4.5 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ST |
11+ |
TO-220 |
62000 |
原裝正品現(xiàn)貨優(yōu)勢(shì)18 |
詢(xún)價(jià) | ||
FSC/仙童 |
24+ |
TO-220 |
7512 |
絕對(duì)原裝現(xiàn)貨,價(jià)格低,歡迎詢(xún)購(gòu)! |
詢(xún)價(jià) | ||
VISHAY |
23+ |
TO-220 |
2800 |
原廠原裝正品 |
詢(xún)價(jià) | ||
IR |
18+ |
MODULE |
1290 |
主打模塊,大量現(xiàn)貨供應(yīng)商QQ2355605126 |
詢(xún)價(jià) | ||
IR |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢(xún)價(jià) | ||
IR |
06+ |
TO-220 |
7000 |
全新原裝 絕對(duì)有貨 |
詢(xún)價(jià) | ||
INTERSIL |
121 |
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu) |
詢(xún)價(jià) | ||||
IR |
23+ |
TO-220 |
18689 |
詢(xún)價(jià) | |||
STM |
16+ |
原廠封裝 |
232765 |
原裝現(xiàn)貨假一罰十 |
詢(xún)價(jià) | ||
IR |
23+ |
TO-220 |
9960 |
價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來(lái)電查詢(xún) |
詢(xún)價(jià) |
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