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IRF9510

3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET

ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitchingr

Intersil

Intersil Corporation

IRF9510

Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-4.0A)

IRF

International Rectifier

IRF9510

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9510

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

KERSEMI

Kersemi Electronic Co., Ltd.

IRF9510

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF9510

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9510

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9510PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9510PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

KERSEMI

Kersemi Electronic Co., Ltd.

IRF9510S

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9510S

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9510S

Power MOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?P-channel ?175°Coperatingtemperature ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovid

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9510S

Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-4.0A)

IRF

International Rectifier

IRF9510S_V01

Power MOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?P-channel ?175°Coperatingtemperature ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovid

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9510SPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9510STRL

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9510STRLPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9510_17

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9510_V01

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9510PBF

HEXFET? Power MOSFET

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào):

    IRF9510

  • 功能描述:

    MOSFET P-Chan 100V 4.0 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
24+
TO-220
15000
全新原裝的現(xiàn)貨
詢價(jià)
IR
2015+
TO-220
19889
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!
詢價(jià)
IR
15
原裝正品長(zhǎng)期供貨,如假包賠包換 徐小姐13714450367
詢價(jià)
IR
23+
TO-220
19526
詢價(jià)
HARRIS
24+
TO-220
2
詢價(jià)
IR
12+
TO-263
15000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
詢價(jià)
IR
05+
原廠原裝
4705
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價(jià)
IR
2022
TO220
5280
原廠原裝正品,價(jià)格超越代理
詢價(jià)
VISHAY/IR
16+
原廠封裝
26050
原裝現(xiàn)貨假一罰十
詢價(jià)
IR
23+
SOP8
5000
原裝正品,假一罰十
詢價(jià)
更多IRF9510供應(yīng)商 更新時(shí)間2024-10-15 14:02:00