首頁 >IRF9530PBF>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

IRF9530PBF

Power MOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.? TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技威世科技半導體

IRF9530PBF

P-Channel 100 V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?100RgandUISTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PowerSwitch ?LoadSwitchinHighCurrentApplications ?DC/DCConverters

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

IRF9530PBF

isc P-Channel MOSFET Transistor

?DESCRIPTION ?Powermanagementinnotebookcomputer ?Portableequipmentandbatterypoweredsystems ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.3? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF9530PBF

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?P-channel ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetp

VishayVishay Siliconix

威世科技威世科技半導體

IRF9530PBF

HEXFET POWER MOSFET

IRF

International Rectifier

IRF9530PBF-BE3

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?P-channel ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetp

VishayVishay Siliconix

威世科技威世科技半導體

IRF9530S

Repetitiveavalancherated

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.? TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itpro

VishayVishay Siliconix

威世科技威世科技半導體

IRF9530S

P-CHANNELPOWERMOSFETFORHI.RELAPPLICATIONS

SEME-LAB

Seme LAB

IRF9530S

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?P-channel ?175°Coperatingtemperature ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovid

VishayVishay Siliconix

威世科技威世科技半導體

IRF9530S

iscP-ChannelMosfetTransistor

FEATURES ·DrainCurrent:ID=-12A@TC=25℃ ·DrainSourceVoltage :VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF9530SMD

P-CHANNELPOWERMOSFETFORHI.RELAPPLICATIONS

SEME-LAB

Seme LAB

IRF9530SPBF

HEXFET?PowerMOSFET

FEATURES ?SurfaceMount ?AvailableinTapeAndReel ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?P-Channel ?175°COperatingTemperature ?FastSwitching ?Lead-Free

IRF

International Rectifier

IRF9530SPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRF9530STRLPBF

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.? TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itpro

VishayVishay Siliconix

威世科技威世科技半導體

IRF9530STRLPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRF9530STRRPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFI9530G

PowerMOSFET(Vdss=-100V,Rds(on)=0.30ohm,Id=-7.7A)

IRF

International Rectifier

IRFI9530G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半導體

IRFI9530G

PowerMOSFET

FEATURES ?Isolatedpackage ?Highvoltageisolation=2.5kVRMS(t=60s; f=60Hz) ?Sinktoleadcreepagedistance=4.8mm ?P-channel ?175°Coperatingtemperature ?DynamicdV/dtrating ?Lowthermalresistance ?Materialcategorization:fordefinitionsofcompliance pleasesee

VishayVishay Siliconix

威世科技威世科技半導體

IRFI9530G

P-ChannelMOSFET

FEATURES ·DrainCurrent-ID=-7.7A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=-10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·PowerFactorCorrection(PFC)

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    IRF9530PBF

  • 功能描述：

    MOSFET -100V Single P-Channel HEXFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
Vishay Siliconix
24+
TO-220AB
30000
晶體管-分立半導體產(chǎn)品-原裝正品
 詢價
VISHAY
15+
原廠原裝
4900
進口原裝現(xiàn)貨假一賠十
 詢價
VISHAY
16+
TO-220
36000
原裝正品,優(yōu)勢庫存81
 詢價
IR
23+
TO-220AB
65400
詢價
VISHAY
2021+
TO-220AB
9450
原裝現(xiàn)貨。
 詢價
VISHAY
2017
TO-220A
21
原裝現(xiàn)貨只有原裝
 詢價
VISHAY
21+
TO-220-3
2850
原裝正品 有掛有貨
 詢價
VISHAY/威世
24+
TO-220
3
只做原廠渠道 可追溯貨源
 詢價
VISHAY/威世
2021+
TO-220
12000
勤思達 只做原裝 現(xiàn)貨庫存
 詢價
VISHAY/威世
2021+
TO-220AB
9000
原裝現(xiàn)貨,隨時歡迎詢價
 詢價
更多IRF9530PBF供應商 更新時間2024-12-23 18:46:00

相關規(guī)格書

更多

相關庫存

更多