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IRF9530PBF

Power MOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.? TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9530PBF

P-Channel 100 V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?100RgandUISTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PowerSwitch ?LoadSwitchinHighCurrentApplications ?DC/DCConverters

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

IRF9530PBF

isc P-Channel MOSFET Transistor

?DESCRIPTION ?Powermanagementinnotebookcomputer ?Portableequipmentandbatterypoweredsystems ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.3? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF9530PBF

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?P-channel ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetp

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9530PBF

HEXFET POWER MOSFET

IRF

International Rectifier

IRF9530PBF-BE3

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?P-channel ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetp

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9530S

Repetitiveavalancherated

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.? TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itpro

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9530S

P-CHANNELPOWERMOSFETFORHI.RELAPPLICATIONS

SEME-LAB

Seme LAB

IRF9530S

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?P-channel ?175°Coperatingtemperature ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovid

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9530S

iscP-ChannelMosfetTransistor

FEATURES ·DrainCurrent:ID=-12A@TC=25℃ ·DrainSourceVoltage :VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    IRF9530PBF

  • 功能描述:

    MOSFET -100V Single P-Channel HEXFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Vishay Siliconix
24+
TO-220AB
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
詢價(jià)
VISHAY
15+
原廠原裝
4900
進(jìn)口原裝現(xiàn)貨假一賠十
詢價(jià)
VISHAY
16+
TO-220
36000
原裝正品,優(yōu)勢(shì)庫(kù)存81
詢價(jià)
IR
23+
TO-220AB
65400
詢價(jià)
VISHAY
2021+
TO-220AB
9450
原裝現(xiàn)貨。
詢價(jià)
VISHAY
2017
TO-220A
21
原裝現(xiàn)貨只有原裝
詢價(jià)
VISHAY
21+
TO-220-3
2850
原裝正品 有掛有貨
詢價(jià)
VISHAY/威世
24+
TO-220
3
只做原廠渠道 可追溯貨源
詢價(jià)
VISHAY/威世
2021+
TO-220
12000
勤思達(dá) 只做原裝 現(xiàn)貨庫(kù)存
詢價(jià)
VISHAY/威世
2021+
TO-220AB
9000
原裝現(xiàn)貨,隨時(shí)歡迎詢價(jià)
詢價(jià)
更多IRF9530PBF供應(yīng)商 更新時(shí)間2025-2-23 14:14:00