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INA310B

INA310x-Q1AEC-Q100,–4Vto110V,1.3MHz,Ultra-PreciseCurrentSenseAmplifierWithOpen-DrainComparatorandReference

1Features ?AEC-Q100qualifiedforautomotiveapplications: –Temperaturegrade1:?40°Cto+125°C,TA ?FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign ?Widecommon-modevoltage: –Operationalvoltage:?4Vto+110V –Survivalvoltage:?20Vt

TITexas Instruments

德州儀器美國德州儀器公司

INA310B

INA310x–4Vto110V,1.3MHz,Ultra-PreciseCurrentSenseAmplifierWithOpen-DrainComparatorandReference

1Features ?Widecommon-modevoltage: –Operationalvoltage:?4Vto+110V –Survivalvoltage:?20Vto+120V ?Highsignalbandwidth:1.3MHz ?Slewrate:2.5V/μs ?ExcellentCMRR:160dB ?Accuracy –Gainerror(maximum) ?VersionA:0.15,10ppm/°Cdrift ?VersionB:0.5,20ppm/°

TITexas Instruments

德州儀器美國德州儀器公司

INA310X

INA310x–4Vto110V,1.3MHz,Ultra-PreciseCurrentSenseAmplifierWithOpen-DrainComparatorandReference

1Features ?Widecommon-modevoltage: –Operationalvoltage:?4Vto+110V –Survivalvoltage:?20Vto+120V ?Highsignalbandwidth:1.3MHz ?Slewrate:2.5V/μs ?ExcellentCMRR:160dB ?Accuracy –Gainerror(maximum) ?VersionA:0.15%,10ppm/°Cdrift ?VersionB:0.5%

TITexas Instruments

德州儀器美國德州儀器公司

INA310X

INA310x–4Vto110V,1.3MHz,Ultra-PreciseCurrentSenseAmplifierWithOpen-DrainComparatorandReference

1Features ?Widecommon-modevoltage: –Operationalvoltage:?4Vto+110V –Survivalvoltage:?20Vto+120V ?Highsignalbandwidth:1.3MHz ?Slewrate:2.5V/μs ?ExcellentCMRR:160dB ?Accuracy –Gainerror(maximum) ?VersionA:0.15%,10ppm/°Cdrift ?VersionB:0.5%

TITexas Instruments

德州儀器美國德州儀器公司

IRFD310

0.4A,400V,3.600Ohm,N-ChannelPowerMOSFET

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRFD310

PowerMOSFET

VDS(V)400 RDS(on)(Ω)VGS=10V3.6 Qg(Max.)(nC)17 Qgs(nC)3.4 Qgd(nC)8.5 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD310

PowerMOSFET(Vdss=400V,Rds(on)=3.6ohm,Id=0.35A)

VDSS=400V RDS(on)=3.6? ID=0.35A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRF

International Rectifier

IRFD310

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD310PBF

HEXFET?PowerMOSFET

VDSS=400V RDS(on)=3.6? ID=0.35A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRF

International Rectifier

IRFD310PBF

PowerMOSFET

VDS(V)400 RDS(on)(Ω)VGS=10V3.6 Qg(Max.)(nC)17 Qgs(nC)3.4 Qgd(nC)8.5 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    HV310

  • 制造商：

    SUPERTEX

  • 制造商全稱：

    SUPERTEX

  • 功能描述：

    Hotswap, Inrush Current Limiter Controllers

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
Microchip Technology
24+
8-SOIC
65200
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SUPERTEX
24+
NA
80000
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Supertex
24+
原廠封裝
7556
原裝現(xiàn)貨
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SUPERTEX
2447
SOP8
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
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MICROCHIP
20+
SOP-8
1001
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Microchip
22+
NA
1899
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Microchip
22+
8SOIC
9000
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Microchip
21+
8SOIC
13880
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Microchip
21+
SOIC
15000
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SUPERTE
23+
SOP-8
10000
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更多HV310供應(yīng)商 更新時(shí)間2025-4-24 10:02:00

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