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IRFD310

PowerMOSFET(Vdss=400V,Rds(on)=3.6ohm,Id=0.35A)

VDSS=400V RDS(on)=3.6? ID=0.35A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRF

International Rectifier

IRFD310

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD310PBF

HEXFET?PowerMOSFET

VDSS=400V RDS(on)=3.6? ID=0.35A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRF

International Rectifier

IRFD310PBF

PowerMOSFET

VDS(V)400 RDS(on)(Ω)VGS=10V3.6 Qg(Max.)(nC)17 Qgs(nC)3.4 Qgd(nC)8.5 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFE310

HEXFETTRANSISTOR

400Volt,3.6?,HEXFET Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.TheLCCprovidesdesignerstheextraflexibilitytheyneedtoincreasecircuitboarddensity.InternationalRectifierhasengineeredtheLCCpacka

IRF

International Rectifier

IRFE310

SimpleDriveRequirements

IRF

International Rectifier

IRFF310

1.35A,400V,3.600Ohm,N-ChannelPowerMOSFET

1.35A,400V,3.600Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETs

Intersil

Intersil Corporation

IRFF310

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET??RANSISTORSTHRU-HOLE(TO-205AF)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowonstateresistancecombinedwithhightransconductance.TheHEXFETtransistorsalsofea

IRF

International Rectifier

IRFF310

N-ChannelMOSFETinaHermeticallysealedTO39

SEME-LAB

Seme LAB

IRFF310

1.35A,400V,3.600Ohm,N-ChannelPowerMOSFET

1.35A,400V,3.600Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

詳細(xì)參數(shù)

  • 型號：

    HW310

  • 制造商：

    NTE Electronics

  • 功能描述：

    RESISTOR 10KOHM 500mW 2% A

  • 功能描述：

    RESISTOR, 10KOHM, 500mW, 2%, AXIAL LEADE

  • 功能描述：

    RESISTOR, 10KOHM, 500mW, 2%, AXIAL LEADED; Product

  • Range：

    NTE ELECTRONICS - HW Series Metal Film Resistor;

  • Resistance：

    10kohm; Power

  • Rating：

    500mW; Resistance

  • Tolerance：

    2%; Resistor Case

  • Style：

    Axial Leaded; Voltage

  • Rating：

    350V ;RoHS

  • Compliant：

    Yes

  • 功能描述：

    Res Metal Film 10K Ohm 2% 1/2W ±200ppm/°C Conformal AXL Thru-Hole

供應(yīng)商型號品牌批號封裝庫存備注價格
SAMTEC
24+
con
35960
查現(xiàn)貨到京北通宇商城
 詢價
ESSEMI
21+
QFN
116
原裝
 詢價
HITACHI
2023+環(huán)?，F(xiàn)貨
CAN-6
10
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù)
 詢價
HITACHI
23+
93
6500
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
HITCAHI
2023+
TO-92
50000
原裝現(xiàn)貨
 詢價
HITACHI
23+
6500
93
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
N/A
23+
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
SAMTEC
23+
NA
582
專做原裝正品,假一罰百!
 詢價
AKM
19+
4-SIP
73752
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
AKM
21+
SIP4
10000
只做原裝,假一罰十
 詢價
更多HW310供應(yīng)商 更新時間2025-4-16 9:30:00

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