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HWCHAS1310BK

Real Walnut Chassis w/ Aluminum Top

KeyFeatures: Heavydutyconstructionwalnutchassis(seecornerdetailphotobelow). Toppanelavailableinachoiceofnaturalaluminumorsatinblackpowderpaintfinish. Walnutchassisis0.778inchesthick(19.8mm)-cornersareproducedwithwoodbracing &dovetailconstructionmethods

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

HWCHAS1310BK

包裝：盒 類別：盒子，外殼，機(jī)架 箱 描述：CHASSIS ALUM BLACK 13\

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

HWCHAS1310BK

包裝：散裝 類別：盒子，外殼，機(jī)架 箱 描述：CHASSIS ALUM BLACK 13\

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

HY1310D

N-ChannelEnhancementModeMOSFET

HUAYIHUAYI MICROELECTRONICS CO.,LTD.

華羿微電華羿微電子股份有限公司

HY1310U

N-ChannelEnhancementModeMOSFET

HUAYIHUAYI MICROELECTRONICS CO.,LTD.

華羿微電華羿微電子股份有限公司

HY1310V

N-ChannelEnhancementModeMOSFET

HUAYIHUAYI MICROELECTRONICS CO.,LTD.

華羿微電華羿微電子股份有限公司

IIRF1310N

N-ChannelMOSFETTransistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.036? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1310N

PowerMOSFET(Vdss=100V,Rds(on)=0.036ohm,Id=42A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF1310N

N-ChannelMOSFETTransistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.036? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1310NL

PowerMOSFET(Vdss=100V,Rds(on)=0.036ohm,Id=42A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF1310NL

AdvancedProcessTechnology

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1310NL

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1310NLPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF1310NPBF

HEXFETPOWERMOSFET

IRF

International Rectifier

IRF1310NPBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRF1310NS

PowerMOSFET(Vdss=100V,Rds(on)=0.036ohm,Id=42A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF1310NS

FullyAvalancheRated

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1310NS

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1310NSPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF1310NSPBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

產(chǎn)品屬性

  • 產(chǎn)品編號：

    HWCHAS1310BK

  • 制造商：

    Hammond Manufacturing

  • 類別：

    盒子，外殼，機(jī)架 > 箱

  • 系列：

    HWCHAS

  • 包裝：

    盒

  • 容器類型：

    底座

  • 大小 / 尺寸：

    13.000" 長 x 10.000" 寬（330.20mm x 254.00mm）

  • 高度：

    3.000"（76.20mm）

  • 面積 (L x W)：

    130in2（839cm2）

  • 設(shè)計(jì)：

    開端

  • 材料：

    金屬，鋁；木質(zhì)

  • 顏色：

    黑色

  • 厚度：

    0.778"（19.76mm）

  • 特性：

    獨(dú)立面板或蓋厚度

  • 描述：

    CHASSIS ALUM BLACK 13\

供應(yīng)商型號品牌批號封裝庫存備注價格
Hammond
2020+
N/A
155
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 詢價
Hammond
22+
NA
155
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
HITACHI
23+
NA
109
專做原裝正品,假一罰百!
 詢價
IDEC
新
22
全新原裝 貨期兩周
 詢價
xilinx
22+
N/A
6800
詢價
xilinx
23+
N/A
8000
全新原裝
 詢價
CSMSC
2023+
SOP8
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
HW
23+
DIP8
1030
特價庫存
 詢價
POW1
05+
原廠原裝
4290
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價
HWD
22+
SOT223
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
更多HWCHAS1310BK供應(yīng)商 更新時間2024-12-23 10:18:00

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