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IRFI360

SimpleDriveRequirements

IRF

International Rectifier

IRFM360

400V,N-CHANNELHEXFETMOSFETTECHNOLOGY

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s

IRF

International Rectifier

IRFM360

SimpleDriveRequirements

IRF

International Rectifier

IRFM360

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=23A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP360

23A,400V,0.200Ohm,N-ChannelPowerMOSFET

ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingc

Intersil

Intersil Corporation

IRFP360

PowerMOSFET(Vdss=400V,Rds(on)=0.20ohm,Id=23A)

IRF

International Rectifier

IRFP360

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP360

MegaMOSFET

Features ?Fastswitchingtimes ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Highcommutingdv/dtrating Applications ?DCchoppers ?MotorControls ?Switch-modeandresonant-mode ?Uninterruptablepowersupplies(UPS) Adva

IXYS

IXYS Corporation

IRFP360

iscN-ChannelMOSFETTransistor

FEATURES ?DrainCurrent–ID=23A@TC=25℃ ?DrainSourceVoltage- :VDSS=400V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max) ?FastSwitching DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP360

Avalanche-Energy-RatedN-ChannelPowerMOSFETs

TheIRFP360andIRFP362areadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperationThesearen-channelenhancement-modesilicon-gatepowerfield-effecttransistorsdesignedforapplicationssuchasswitchingre

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
22+
SOT23-6
20000
深圳原裝現(xiàn)貨正品有單價格可談
 詢價
HX(恒佳興)
2447
SOT-23-6L
105000
3000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
 詢價
HX(恒佳興)
2021+
SOT-23-6L
5066
詢價
23+
SOT23-6
8866666
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
23+
SOT23-6
8866666
詢價
24+
NA/
115240
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
 詢價
N/A
23+
80000
專注配單,只做原裝進口現(xiàn)貨
 詢價
N/A
23+
80000
專注配單,只做原裝進口現(xiàn)貨
 詢價
HX(恒佳興)
23+
SOT-23-6L
9460
10年專業(yè)做電源IC/原裝現(xiàn)貨庫存
 詢價
HXWSEMI
24+
SOT23-6
60000
全新原裝現(xiàn)貨
 詢價
更多HX360供應(yīng)商 更新時間2025-4-16 16:45:00

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