首頁(yè) >HX6408-VFN>規(guī)格書(shū)列表

零件編號(hào)下載&訂購(gòu)功能描述制造商&上傳企業(yè)LOGO

HX6408-VFN

512k x 8 STATIC RAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408-VHM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408-VHN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408-VNM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408-VNN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408-VRM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408-VRN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408XEFM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408XEFN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408XEHM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408XEHN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408XENM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408XENN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408XERM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408XERN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408XQFM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408XQFN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408XQHM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408XQHN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408XQNM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

詳細(xì)參數(shù)

  • 型號(hào):

    HX6408-VFN

  • 制造商:

    HONEYWELL

  • 制造商全稱(chēng):

    Honeywell Solid State Electronics Center

  • 功能描述:

    512k x 8 STATIC RAM

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
HONYWELL
15+
原廠封裝
5
宇航IC只做原裝假一罰十
詢(xún)價(jià)
HONYWELL
24+
N/A
90000
原廠正規(guī)渠道現(xiàn)貨、保證原裝正品價(jià)格合理
詢(xún)價(jià)
HONYWELL
24+
5
全新原裝
詢(xún)價(jià)
HONYWELL
18+
原廠原裝假一賠十
18
原廠很遠(yuǎn)現(xiàn)貨很近,找現(xiàn)貨選星佑電子,原廠原裝假一賠
詢(xún)價(jià)
HONYWELL
2022+
5
只做原裝,價(jià)格優(yōu)惠,長(zhǎng)期供貨。
詢(xún)價(jià)
HONYWELL
23+
10000
原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢(xún)價(jià)
HUAXIN(華芯)
23+
SOT23
50000
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!
詢(xún)價(jià)
HUAXIN(華芯)
23+
SOT23
6000
誠(chéng)信服務(wù),絕對(duì)原裝原盤(pán)
詢(xún)價(jià)
HUAXIN(華芯)
2021+
TO-92S
1414
詢(xún)價(jià)
EXPLORE
2021+
QFP
100500
一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
詢(xún)價(jià)
更多HX6408-VFN供應(yīng)商 更新時(shí)間2024-10-25 16:00:00