首頁 >HY57V561620ETP-H>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
4Banksx4Mx16BitSynchronousDRAM TheHY57V561620Tisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620isorganizedas4banksof4,194,304x16. TheHY57V561620Tisofferingfullysynchronousoperationreferencedtoapo | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
HY |
16+ |
TSOP |
26 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
HYINY |
2020+ |
TSOP |
350000 |
100%進(jìn)口原裝正品公司現(xiàn)貨庫存 |
詢價(jià) | ||
HYNIX |
2020+ |
TSOP |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
HYNIX/海力士 |
2021+ |
TSOP54 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價(jià) | ||
HYNIX/海力士 |
19+ |
TSOP54 |
2526 |
進(jìn)口原裝現(xiàn)貨 |
詢價(jià) | ||
TSOP |
23+ |
16 |
3500 |
詢價(jià) | |||
HY |
23+ |
SOP |
3200 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售 |
詢價(jià) | ||
HYNIX |
TSOP54 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
HYNIX |
23+ |
TSOP54 |
3926 |
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價(jià) | ||
HYNIX |
19+ |
TSOP |
9600 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) |
相關(guān)規(guī)格書
更多- HY57V641620ET-7
- HY57V641620ETP-7
- HY57V641620HGT-6
- HY57V641620HGT-H
- HY57V643220CT-7
- HY5DU281622ET-5
- HY5DU283222Q-5
- HY6116ALP-10
- HY62256A
- HY62256ALJ-70
- HY62256ALP-70
- HY6264ALJ-10
- HY6264ALP-10
- HY6264LP-10
- HY628100ALLG-70
- HY628100BLLG-55
- HY628100BLLT1-70
- HY628400ALLG-55
- HY628400ALLT2-55
- HY62UF16101LLM-10IDR
- HY62WT08081E-DG70C
- HYB39D32322TQ-6
- HYB41256-12
- HYB514256BJ-70
- I1-201-5
- I90135F
- IAA110P
- IAM-81008
- IAM-91563-TR1
- IC41C16256-35K
- IC42S16100-7T
- IC42S16800-7T
- IC-5006-SP1
- IC61C256AH-12J
- IC61C256AH-15N
- ICD2023SC-2
- ICD2051SC
- ICE1PCS01
- ICE2A0565
- ICE2A165
- ICE2A265
- ICE2A280Z
- ICE2A765P
- ICE2B0565
- ICE2B265
相關(guān)庫存
更多- HY57V641620ET-H
- HY57V641620HG
- HY57V641620HGT-7
- HY57V643220CT-6
- HY57V643220DT-6
- HY5DU283222AQ-5
- HY5DU643222AQ-5
- HY6116AP-10
- HY62256ALJ-10
- HY62256ALP-10
- HY62256ALT1-70
- HY6264ALJ-70
- HY6264ALP-70
- HY628100ALG-70
- HY628100B
- HY628100BLLG-70
- HY628100BLT1-70
- HY628400ALLG-70
- HY62CT08081E-DP70C
- HY62V8400ALLG-70
- HY62WT081ED70C
- HYB39S128160CT-7
- HYB514171BJ-70
- HZU30BTRF
- I80134E
- I90188F
- IAM81008
- IAM-81008-TR1
- IC01CP
- IC41C16257-35K
- IC42S16400-7T
- IC42S32200-6T
- IC-5007-SP1
- IC61C256AH-15J
- IC61LV25616-10T
- ICD2025SC-1
- ICD2061ASC-1
- ICE1QS01
- ICE2A0565Z
- ICE2A180Z
- ICE2A280
- ICE2A365
- ICE2AS01
- ICE2B165
- ICE2B365
