首頁>HY57V561620LT-H>規(guī)格書詳情
HY57V561620LT-H中文資料海力士數(shù)據(jù)手冊PDF規(guī)格書
相關(guān)芯片規(guī)格書
更多- HY57V561620LT-8
- HY57V561620CT-6
- HY57V561620CT-H
- HY57V561620CLTP-8
- HY57V561620CLTP-P
- HY57V561620CLTP-S
- HY57V561620CTP-6
- HY57V561620CLTP-6
- HY57V561620CLTP-K
- HY57V561620CT-7
- HY57V561620CLTP-H
- HY57V561620CLT-P
- HY57V561620CT-K
- HY57V561620CT-S
- HY57V561620CTP-S
- HY57V561620CLTP-7
- HY57V561620CTP-H
- HY57V561620CT-8
HY57V561620LT-H規(guī)格書詳情
The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16.
The HY57V561620T is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL.
產(chǎn)品屬性
- 型號:
HY57V561620LT-H
- 制造商:
HYNIX
- 制造商全稱:
Hynix Semiconductor
- 功能描述:
4Banks x 4M x 16Bit Synchronous DRAM
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
HYNIX |
23+ |
TSOP |
1600 |
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購! |
詢價 | ||
ST/意法 |
23+ |
TSOP48 |
69820 |
終端可以免費供樣,支持BOM配單! |
詢價 | ||
HY |
24+ |
TSOP |
5645 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | ||
ALLIANCE |
18+ |
TSOP |
85600 |
保證進口原裝可開17%增值稅發(fā)票 |
詢價 | ||
HYNIX/海力士 |
23+ |
TSOP54 |
6800 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
HYUNDAI |
2023+ |
SMD |
16802 |
安羅世紀電子只做原裝正品貨 |
詢價 | ||
SKHYNIX |
24+ |
TSOP |
35200 |
一級代理/放心采購 |
詢價 | ||
HYNIX/海力士 |
2022+ |
TSOP54 |
3000 |
原廠代理 終端免費提供樣品 |
詢價 | ||
HY |
2022 |
SOP |
3080 |
原裝正品 |
詢價 | ||
HYUNDAI |
2023+ |
TSOP |
3625 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價 |