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HY62256ALLR1中文資料SK海力士數(shù)據(jù)手冊(cè)PDF規(guī)格書
HY62256ALLR1規(guī)格書詳情
Description
The HY62256A/HY62256A-I is a high-speed, low power and 32,786 x 8-bits CMOS Static Random Access Memory fabricated using Hyundais high performance CMOS process technology. The HY62256A/HY62256A-I
has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0 volt. Using the CMOS technology, supply voltages from 2.0 to 5.5 volt has little effect on supply current in the data retention mode. The HY62256A/HY62256A-I is suitable for use in low voltage operation and battery back-up application.
Features
·Fully static operation and Tri-state outputs
·TTL compatible inputs and outputs
·Low power consumption
-2.0V(min.) data retention
·Standard pin configuration
-28 pin 600 mil PDIP
-28 pin 330 mil SOP
-28 pin 8x13.4 mm
TSOP-1 (standard and reversed)
產(chǎn)品屬性
- 型號(hào)：
HY62256ALLR1
- 功能描述：
DRAM & SRAM MEMORY
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
LSSJ |
1736+ |
DIP28 |
8298 |
只做進(jìn)口原裝正品假一賠十! |
詢價(jià) | ||
HY |
23+ |
DIP |
20000 |
原廠原裝正品現(xiàn)貨 |
詢價(jià) | ||
HY |
23+ |
QFP |
3200 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售 |
詢價(jià) | ||
HY |
20+ |
DIP |
26580 |
全新原裝長期特價(jià)銷售 |
詢價(jià) | ||
HY |
23+ |
DIP |
10000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
YUNDV |
18+ |
DIP |
34753 |
全新原裝現(xiàn)貨,可出樣品,可開增值稅發(fā)票 |
詢價(jià) | ||
HY |
22+ |
SOP-28 |
3200 |
全新原裝品牌專營 |
詢價(jià) | ||
KOREA |
96+ |
DIP-28/7.2mm |
2 |
原裝現(xiàn)貨海量庫存歡迎咨詢 |
詢價(jià) | ||
HYNIX |
22+ |
TSSOP-28 |
4650 |
詢價(jià) | |||
HYNIX |
新年份 |
NA |
3500 |
絕對(duì)全新原裝現(xiàn)貨,歡迎來電查詢 |
詢價(jià) |
