HYB514265BJ-45中文資料西門子數據手冊PDF規(guī)格書

256K x 16-Bit EDO-Dynamic RAM

The HYB 5(3)14265BJ(L) is the new generation dynamic RAM organized as 262 144 words by 16-bit. The HYB 5(3)14265BJ(L) utilizes the SIEMENS 16M-CMOS submicron silicon gate process as well as advanced circuit techniques to provide wide operation margins, both internally and for the system user. Multiplexed address inputs permit the HYB 5(3)14265BJ(L) to be packed in a standard plastic 400mil wide P-SOJ-40-3 package. This package size provides high system bit densities and is compatible with commonly used automatic testing and insertion equipment.

The HYB314265BJL parts have a very low power “sleep mode“ supported by Self Refresh.

Preliminary Information

? 262 144 words by 16-bit organization

? 0 to 70 °C operating temperature

? EDO - Hyper Page Mode

? Performance:

? Low Power dissipation

- Active(max.): 120mA / 120mA / 105mA / 95 mA

- Standby : TTL Inputs (max.) 2.0 mA

- Standby: CMOS Inputs (max.) 1.0 mA

- Standby (L-version) 200 μA

? Power Supply:

? Read, write, read-modify-write, CAS -before RAS refresh, RAS only refresh, hidden refresh mode

? Low Power Version (L) with Self Refresh and 250 μA self refresh current

? 2 CAS / 1 WE control

? All inputs and outputs TTL-compatible

? 512 refresh cycles / 16 ms

512 refresh cycles / 128 ms (L-version)

? Plastic Packages: P-SOJ-40-3 400 mil width