HYM321005GS-50中文資料西門子數(shù)據(jù)手冊PDF規(guī)格書

The HYM 321005S/GS-50/-60 is a 4 MByte EDO- DRAM module organized as 1 048 576 words by 32-bit in a 72-pin single-in-line package comprising two HYB 5118165BSJ 1M × 16 EDO-DRAMs in 400 mil wide SOJ-packages mounted together with two 0.2 μF ceramic decoupling capacitors on a PC board.

Advanced Information

? SIMM modules with 1 048 576 words by 32-bit organization for PC main memory applications

? Fast access and cycle time

50 ns access time

84 ns cycle time (-50 version)

60 ns access time

104 ns cycle time (-60 version)

? Hyper page mode- EDO capability with

20 ns cycle time (-50 version)

25 ns cycle time (-60 version)

? Single + 5 V (± 10 ) supply

? Low power dissipation

max 2200 mW active (-50 version)

max. 1980 mW active (-60 version)

CMOS – 11 mW standby

TTL – 22 mW standby

? CAS-before-RAS refresh, RAS-only-refresh, Hidden refresh

? 2 decoupling capacitors mounted on substrate

? All inputs, outputs and clock fully TTL compatible

? 72 pin Single in-Line Memory Module

? Utilizes two 1M × 16 -DRAMs in SOJ-42 packages

? 1024 refresh cycles / 16 ms

? Optimized for use in byte-write non-parity applications

? Tin-Lead contact pad HYM 321005S

? Gold-Lead contact pad HYM 321005GS

? single sided module with 20.32 mm (800 mil) height