HYM368025S中文資料西門子數(shù)據(jù)手冊PDF規(guī)格書

The HYM 368025S/GS-50/-60 is a 32 MByte DRAM module organized as 8 388 608 words by 36- Bit in two banks in a 72-pin single-in-line package comprising sixteen HYB 5117405BJ 4M × 4 EDO-DRAMs and eight HYB 514105BJ 4M x 1 EDO-DRAMs in 300 mil wide SOJ-packages mounted together with decoupling capacitors on a PC board.

? SIMM modules with 8 388 608 words by 36-bit organization in two banks for PC main memory applications

? Fast access and cycle time

50 ns access time

84 ns cycle time (-50 version)

60 ns access time

104 ns cycle time (-60 version)

? Hyper Page Mode (EDO) capability

20 ns cycle time (-50 version)

25 ns cycle time (-60 version)

? Single + 5 V (± 10 ) supply

? Low power dissipation

max. 6820 mW active (-50 version)

max. 6160 mW active (-60 version)

CMOS – 132 mW standby

TTL –264 mW standby

? CAS-before-RAS refresh

RAS-only-refresh

Hidden-refresh

? Decoupling capacitors mounted on substrate

? All inputs, outputs and clocks fully TTL compatible

? 72 pin Single in-Line Memory Module (L-SIM-72-14) with 31.75 mm height

? Utilizes sixteen 4Mx4-EDO-DRAMs and eight 4M x 1 EDO-DRAMs in 300 mil wide SOJ packages

? 2048 refresh cycles / 32 ms

? Optimized for use in byte-write parity applications

? Tin-Lead contact pads (S- version)

? Gold contact pads (GS - version)