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IIRF1010E

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IIRF1010EZ

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IIRF1010N

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IIRF1010Z

N-ChannelMOSFETTransistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤7.5m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperati

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IIRFR1010Z

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IMXRT1010CEC

i.MXRT1010CrossoverProcessorsDataSheetforConsumerProducts

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

IMXRT1010IEC

i.MXRT1010CrossoverProcessorsDataSheetforIndustrialProducts

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

IPT-1010

ICReferenceDesignTransformers

ICE

ice Components, Ins.

IRF1010

N-ChannelPowerMOSFET

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

IRF1010E

PowerMOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

?AdvancedProcessTechnology ?UltraLowOn-Resistance ?Dynamicdv/dtRating ?175°COperatingTemperature ?FastSwitching ?FullyAvalancheRated Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveex

IRF

International Rectifier

IRF1010E

UltraLowOn-Resistance

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1010E

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1010EL

PowerMOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A??

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF1010ELPBF

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF1010ELPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1010EPBF

HEXFET?PowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRF1010EPBF

AdvancedProcessTechnologyUltraLowOn-Resistance

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1010ES

PowerMOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A??

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF1010ES

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1010ESPBF

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

詳細參數(shù)

  • 型號:

    I1010 CAL

  • 制造商:

    Fluke Electronics

  • 功能描述:

    CALIBRATED - AC/DC CURRENT CLAMP,1000A DC,600A AC

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8
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2022+
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23+
DIP48
1220
全新原裝現(xiàn)貨
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23+
DIP-48
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24+
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2679
原裝優(yōu)勢!絕對公司現(xiàn)貨!可長期供貨!
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更多I1010 CAL供應(yīng)商 更新時間2025-1-14 8:00:00