| 零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
ProgrammableRambusTMXDRTMClockGenerator | IDT Integrated Device Technology, Inc. | IDT | ||
ProgrammableRambusTMXDRTMClockGenerator | IDT Integrated Device Technology, Inc. | IDT | ||
PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
DynamicdV/dtRating DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
0.6A,200V,1.500Ohm,P-ChannelPowerMOSFET ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | Intersil Intersil Corporation | Intersil | ||
PowerMOSFET(Vdss=-200V,Rds(on)=1.5ohm,Id=-0.56A) HEXFETPowerMOSFET ●DynamicdV/dtRating ●RepetitiveAvalancheRated ●ForAutomaticInsertion ●EndStackable ●P-Channel ●FastSwitching ●EaseofParalleling | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HEXFETPowerMOSFET HEXFETPowerMOSFET ●DynamicdV/dtRating ●RepetitiveAvalancheRated ●ForAutomaticInsertion ●EndStackable ●P-Channel ●FastSwitching ●EaseofParalleling ●Lead-Free | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerstheextraflexibilitytheyneedtoincreasecircuitboarddensity.InternationalRe | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
P-ChannelMOSFETinaHermeticallysealedTO39 | SEME-LAB Seme LAB | SEME-LAB | ||
-2.5A,-200V,1.5Ohm,P-ChannelPowerMOSFETs -2.5A,-200V,1.5Ohm,P-ChannelPowerMOSFETs TheseareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheyareP-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforappl | Intersil Intersil Corporation | Intersil | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET??RANSISTORSTHRU-HOLE(TO-205AF) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. Features: ■RepetitiveAvala | IRF International Rectifier | IRF | ||
HEXFETTRANSISTORSTHRU-HOLE(TO-205AF) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. Features: ■RepetitiveAvala | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=-200V,Rds(on)=1.5ohm,Id=-3.6A) DESCRIPTION TheHEXFEtechnologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. FEATURES ? | IRF International Rectifier | IRF | ||
3.6A,200V,1.500Ohm,P-ChannelPowerMOSFETs TheseareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecificlevelofenergyintheavalanchebreakdownmodeofoperation.TheseareP-Channelenhancement-modesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switching | Intersil Intersil Corporation | Intersil | ||
PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
2023+ |
80000 |
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) | |||
SAMSUNG/三星 |
23+ |
10000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | |||
FERROXCUBE |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
Ferroxcube |
1930+ |
N/A |
89 |
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物 |
詢價(jià) | ||
Ferroxcube |
22+ |
NA |
89 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) | ||
Ferroxcube |
23+ |
NA |
19992 |
確保原裝正品,專注終端客戶一站式BOM配單 |
詢價(jià) | ||
SAMSUNG |
22+23+ |
15060 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | |||
23+ |
CDIP-8 |
5000 |
現(xiàn)貨或發(fā)貨一天 |
詢價(jià) | |||
NUVOTON |
22+ |
LQFP64 |
3255 |
強(qiáng)勢(shì)庫存!原裝現(xiàn)貨! |
詢價(jià) | ||
NUVOTON |
2023 |
QFN48 |
4202 |
原廠代理渠道,正品保障 |
詢價(jià) |
相關(guān)規(guī)格書
更多- IAA110P
- IAM-81008
- IAM-91563-TR1
- IC41C16256-35K
- IC42S16100-7T
- IC42S16800-7T
- IC-5006-SP1
- IC61C256AH-12J
- IC61C256AH-15N
- ICD2023SC-2
- ICD2051SC
- ICE1PCS01
- ICE2A0565
- ICE2A165
- ICE2A265
- ICE2A280Z
- ICE2A765P
- ICE2B0565
- ICE2B265
- ICE2BS01
- ICL232CPE
- ICL232MJE
- ICL3207CB
- ICL3207ECB
- ICL3217ECA
- ICL3221CV
- ICL3221EIA
- ICL3222CA
- ICL3222CV
- ICL3222ECA
- ICL3222EIV
- ICL3223CA
- ICL3223ECA
- ICL3223IA
- ICL3226CA
- ICL3227ECA
- ICL3232CB
- ICL3232CV
- ICL3232ECB
- ICL3232EIA
- ICL3232IBN
- ICL3237IA
- ICL3241CA
- ICL3241CV
- ICL3243CA
相關(guān)庫存
更多- IAM81008
- IAM-81008-TR1
- IC01CP
- IC41C16257-35K
- IC42S16400-7T
- IC42S32200-6T
- IC-5007-SP1
- IC61C256AH-15J
- IC61LV25616-10T
- ICD2025SC-1
- ICD2061ASC-1
- ICE1QS01
- ICE2A0565Z
- ICE2A180Z
- ICE2A280
- ICE2A365
- ICE2AS01
- ICE2B165
- ICE2B365
- ICL232CBE
- ICL232IPE
- ICL3207CA
- ICL3207ECA
- ICL3217CA
- ICL3221CA
- ICL3221ECA
- ICL3221IA
- ICL3222CB
- ICL3222CV-T
- ICL3222EIB
- ICL3222IB
- ICL3223CV
- ICL3223ECV
- ICL3224CA
- ICL3226EIA
- ICL3232CA
- ICL3232CP
- ICL3232ECA
- ICL3232ECBN
- ICL3232IB
- ICL3232IV
- ICL3238EIA
- ICL3241CB
- ICL3241ECA
- ICL3243CB
