首頁 >IC61LV12816-12T>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
IC61LV12816-12T | 128K x 16 Hight Speed SRAM with 3.3V DESCRIPTION TheICSIIC61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith | ICSI Integrated Circuit Solution Inc | ICSI | |
128K x 16 Hight Speed SRAM with 3.3V DESCRIPTION TheICSIIC61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith | ICSI Integrated Circuit Solution Inc | ICSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAM DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi | ICSI Integrated Circuit Solution Inc | ICSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAM DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi | ICSI Integrated Circuit Solution Inc | ICSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAM DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi | ICSI Integrated Circuit Solution Inc | ICSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAM DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi | ICSI Integrated Circuit Solution Inc | ICSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAM DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi | ICSI Integrated Circuit Solution Inc | ICSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ISSI |
2023+ |
TSOP |
3783 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價 | ||
ISSI |
16+ |
TSOP |
120 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
ICSI |
23+ |
TSOP-44 |
8890 |
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢 |
詢價 | ||
ISSI |
2339+ |
TSOP |
5825 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | ||
ISSI |
23+ |
TSOP |
5000 |
原裝正品,假一罰十 |
詢價 | ||
ISSI |
2020+ |
原廠封裝 |
350000 |
100%進(jìn)口原裝正品公司現(xiàn)貨庫存 |
詢價 | ||
ICSI |
0419+ |
TSOP-44 |
65 |
原裝現(xiàn)貨海量庫存歡迎咨詢 |
詢價 | ||
ICSI |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費送樣 |
詢價 | ||
ISSI |
23+ |
TSSOP |
8650 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
INTEGRATEDS |
23+ |
原廠封裝 |
9888 |
專做原裝正品,假一罰百! |
詢價 |
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