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IS61LV12816-12BI	文件：88.69 Kbytes Page：11 Pages	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith	ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司	ISSI
IS61LV12816-12BI	文件：146.94 Kbytes Page：11 Pages	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi	ICSI Integrated Circuit Solution Inc	ICSI
IS61LV12816-12K	文件：59.28 Kbytes Page：12 Pages	128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith	ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司	ISSI
IS61LV12816-12K	文件：88.69 Kbytes Page：11 Pages	128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith	ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司	ISSI
IS61LV12816-12K	文件：146.94 Kbytes Page：11 Pages	128Kx16HIGH-SPEEDCMOSSTATICRAM DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi	ICSI Integrated Circuit Solution Inc	ICSI
IS61LV12816-12KI	文件：146.94 Kbytes Page：11 Pages	128Kx16HIGH-SPEEDCMOSSTATICRAM DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi	ICSI Integrated Circuit Solution Inc	ICSI
IS61LV12816-12KI	文件：88.69 Kbytes Page：11 Pages	128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith	ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司	ISSI
IS61LV12816-12LQ	文件：88.69 Kbytes Page：11 Pages	128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith	ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司	ISSI
IS61LV12816-12LQ	文件：59.28 Kbytes Page：12 Pages	128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith	ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司	ISSI
IS61LV12816-12LQI	文件：59.28 Kbytes Page：12 Pages	128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith	ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司	ISSI
IS61LV12816-12LQI	文件：88.69 Kbytes Page：11 Pages	128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith	ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司	ISSI
IS61LV12816-12T	文件：146.94 Kbytes Page：11 Pages	128Kx16HIGH-SPEEDCMOSSTATICRAM DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi	ICSI Integrated Circuit Solution Inc	ICSI
IS61LV12816-12T	文件：59.28 Kbytes Page：12 Pages	128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith	ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司	ISSI
IS61LV12816-12T	文件：88.69 Kbytes Page：11 Pages	128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith	ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司	ISSI
IS61LV12816-12TI	文件：59.28 Kbytes Page：12 Pages	128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith	ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司	ISSI
IS61LV12816-12TI	文件：146.94 Kbytes Page：11 Pages	128Kx16HIGH-SPEEDCMOSSTATICRAM DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi	ICSI Integrated Circuit Solution Inc	ICSI
IS61LV12816-12TI	文件：88.69 Kbytes Page：11 Pages	128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith	ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司	ISSI

詳細(xì)參數(shù)

型號(hào)：
IS61LV12816-12BI
制造商：
ICSI
制造商全稱：
Integrated Circuit Solution Inc
功能描述：
128K x 16 HIGH-SPEED CMOS STATIC RAM

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市博浩通科技有限公司	IS61LV12816-12BI	ISSI	23+	BGA	7628	特價(jià)庫存	詢價(jià)
深圳市永貝爾科技有限公司	IS61LV12816-12BI	ICSI	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	IS61LV12816-12BI	ISSI	23+	BGA	3000	一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、	詢價(jià)
深圳市昌和盛利電子有限公司	IS61LV12816-12K	SI	23+	N/A	12735		詢價(jià)
深圳市星佑電子有限公司	IS61LV12816-12K	INTEGRATEDSI	05+	原廠原裝	4299	只做全新原裝真實(shí)現(xiàn)貨供應(yīng)	詢價(jià)
深圳市益百分電子有限公司	IS61LV12816-12K	ICSI	00+	SOJ44	2550	全新原裝進(jìn)口自己庫存優(yōu)勢(shì)	詢價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	IS61LV12816-12K	ICSI	23+	SOJ44	37305	原裝正品,假一罰十	詢價(jià)
深圳市佳鑫美電子科技有限公司	IS61LV12816-12K	ICSI	24+	SOJ44	2560	絕對(duì)原裝!現(xiàn)貨熱賣!	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	IS61LV12816-12K	ICSI	2016+	SOJ	6528	只做進(jìn)口原裝現(xiàn)貨!或訂貨,假一賠十!	詢價(jià)
上海專毅電子科技有限公司	IS61LV12816-12K	ICSI	17+	SOJ44	9988	只做原裝進(jìn)口,自己庫存	詢價(jià)

更多IS61LV12816-12BI供應(yīng)商更新時(shí)間2024-12-22 14:02:00

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