首頁(yè) >IC61LV12816-12TG>規(guī)格書(shū)列表
| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
128Kx16HightSpeedSRAMwith3.3V DESCRIPTION TheICSIIC61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith | ICSI Integrated Circuit Solution Inc | ICSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAM DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi | ICSI Integrated Circuit Solution Inc | ICSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAM DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi | ICSI Integrated Circuit Solution Inc | ICSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAM DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi | ICSI Integrated Circuit Solution Inc | ICSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAM DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi | ICSI Integrated Circuit Solution Inc | ICSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAM DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi | ICSI Integrated Circuit Solution Inc | ICSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx16HIGH-SPEEDCMOSSTATICRAM DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi | ICSI Integrated Circuit Solution Inc | ICSI |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ICSI |
23+ |
TSSOP |
4000 |
一級(jí)代理原廠VIP渠道,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、 |
詢(xún)價(jià) | ||
ICSI |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢(xún)價(jià) | ||
BGA |
250 |
詢(xún)價(jià) | |||||
ICSI |
2020+ |
(BGA) |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
詢(xún)價(jià) | ||
ICSI |
2022+ |
20 |
全新原裝 貨期兩周 |
詢(xún)價(jià) | |||
SI |
21+ |
BGA |
10000 |
原裝現(xiàn)貨假一罰十 |
詢(xún)價(jià) | ||
SI |
BGA |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢(xún)價(jià) | |||
ICSI |
02+ |
(BGA) |
20 |
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力 |
詢(xún)價(jià) | ||
ICSI |
2023+環(huán)?，F(xiàn)貨 |
BGA |
5050 |
專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)等方案配套一站式服務(wù) |
詢(xún)價(jià) | ||
ICSI |
23+ |
(BGA) |
20 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢(xún)價(jià) |
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