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IRF520

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類(lèi)制造商etc2未分類(lèi)制造商

IRF520

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfor

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF520A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.155Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF520A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF520FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS ■TYPICALRDS(on)=0.23? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE APPLICATIONS ■HIGHCURRENT,HIGHSPE

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF520FI

iscN-ChannelMOSFETTransistor

?DESCRITION ?HighCurrent,HighSpeedSwitching ?DC-DC&DC-ACConverters ?MotorControl,AudioAmplifiers ?FEATURES ?TypicalRDS(on)=0.23Ω ?AvalancheRuggedTechnology ?HighCurrentCapability ?LowGateCharge ?175℃OperatingTemperature

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF520L

PowerMOSFET(Vdss=100V,Rds(on)=0.20ohm,Id=9.7A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF520N

PowerMOSFET(Vdss=100V,Rds(on)=0.20Ohm,Id=9.7A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF520N

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF520NL

Low-profilethrough-hole(IRF520NL)

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowin

KERSEMI

Kersemi Electronic Co., Ltd.

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ICS
2018+
SOP/DIPQFP
776
原裝假一賠十
 詢(xún)價(jià)
ICS
1922+
SOP-8
10000
公司進(jìn)口原裝特價(jià)處理
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ICS
24+
SOP8
80
詢(xún)價(jià)
ICS
23+
2
6500
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
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ICS
23+
6500
2
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
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ICS
23+
SOP8
1010
優(yōu)勢(shì)庫(kù)存
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IDT
20+
15
進(jìn)口原裝現(xiàn)貨,假一賠十
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IDT
23+
NA
19960
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IDT
23+
SOP-8
50000
全新原裝正品現(xiàn)貨,支持訂貨
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IDT
2022
SOP-8
80000
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更多ICS-520I供應(yīng)商 更新時(shí)間2025-3-14 8:00:00

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