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IRF520A

Advanced Power MOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.155Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF520A

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF520FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS ■TYPICALRDS(on)=0.23? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE APPLICATIONS ■HIGHCURRENT,HIGHSPE

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

IRF520FI

iscN-ChannelMOSFETTransistor

?DESCRITION ?HighCurrent,HighSpeedSwitching ?DC-DC&DC-ACConverters ?MotorControl,AudioAmplifiers ?FEATURES ?TypicalRDS(on)=0.23Ω ?AvalancheRuggedTechnology ?HighCurrentCapability ?LowGateCharge ?175℃OperatingTemperature

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF520L

PowerMOSFET(Vdss=100V,Rds(on)=0.20ohm,Id=9.7A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF520N

PowerMOSFET(Vdss=100V,Rds(on)=0.20Ohm,Id=9.7A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF520N

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF520NL

Low-profilethrough-hole(IRF520NL)

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowin

KERSEMI

Kersemi Electronic Co., Ltd.

IRF520NL

AdvancedProcessTechnology

IRF

International Rectifier

IRF520NL

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    IRF520A

  • 功能描述：

    MOSFET 9.2A 100V .4 OHM

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
FAIRCHILD
23+
TO-220
9526
詢價
FAIRCHILD
06+
原廠原裝
50016
只做全新原裝真實現(xiàn)貨供應
 詢價
IR
15+
TO-220
11560
全新原裝,現(xiàn)貨庫存,長期供應
 詢價
IR/ST/仙童
23+
TO-220
3000
全新原裝
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
FAIRCHILD
24+
35200
一級代理/放心采購
 詢價
IR
21+
TO-252
30000
只做正品原裝現(xiàn)貨
 詢價
FSC
23+
TO-220
6000
原裝正品假一罰百!可開增票!
 詢價
SEC
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
SEC
21+
TO-220
10000
原裝現(xiàn)貨假一罰十
 詢價
更多IRF520A供應商 更新時間2025-1-23 9:00:00

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