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IRF530

N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

IRF530

N-CHANNEL ENHANCEMENT-MODE SILICON GATE

PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate TMOSPOWERFET14AMPERES100VOLTSRDS(on)=0.140Ω

TRSYS

Transys Electronics

IRF530

N-CHANNEL POWER MOSFETS

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF530

N-Channel Power MOSFETs, 20 A, 60-100 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpower,supplies,UPS,ACandDCmotorcontrol,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ●

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF530

N-Channel Power MOSFETs Avalanche Energy Rated

HARRIS

Harris Corporation

IRF530

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS N-channelenhancementmodePOWERMOSfieldeffecttransistors.EasydriveandveryfastswitchingtimesmakethesePOWERMOStransistorsidealforhighspeedswitchingapplications.ApplicationsincludeDC/DCconverters,UPSbatterychargers,s

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF530

Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A)

IRF

International Rectifier

IRF530

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF530

N??hannel Enhancement??ode Silicon Gate

TMOSE?FET.?PowerFieldEffectTransistor N?ChannelEnhancement?ModeSiliconGate ThisadvancedTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain?to?sourcediodewithafastrecoverytime.Designedfo

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

IRF530

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfor

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF530

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=14A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF530

TO-220-3L Plastic-Encapsulate MOSFETS

FEATURES LowRDS(on) VGSRatedat ± 20V SiliconGateforFastSwitchingSpeed Rugged LowDriveRequirements DESCRITION Designedespeciallyforhighvoltage,highspeedapplications, suchasoff-lineswitchingpowersupplies,UPS,ACandDC motorcontrols,relayandsolenoiddrivers.

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

IRF530

14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF530

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF530

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRF530

14.0A 100V N CHANNEL POWER MOSFET

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

IRF530

N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF530

N-CHANNEL 100V - 0.115 W - 14A TO-220 LOW GATE CHARGE STripFET??II POWER MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF530_V01

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfor

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF5305

Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieve extremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF530

  • 功能描述：

    MOSFET N-Chan 100V 9.2 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
XY/星宇佳
21+
TO-220
20000
自主品牌 量大可定
 詢價(jià)
IR
24+
TO-220
24550
進(jìn)口原裝現(xiàn)貨
 詢價(jià)
ON/安森美
0042+
TO-220
300
原裝正品 可含稅交易
 詢價(jià)
IR
24+
TO-220
15800
絕對(duì)原裝現(xiàn)貨,價(jià)格低,歡迎詢購(gòu)!
 詢價(jià)
IR
23+
1688
房間現(xiàn)貨庫(kù)存:QQ:373621633
 詢價(jià)
ON/安森美
23+
TO-220
12500
全新原裝現(xiàn)貨,假一賠十
 詢價(jià)
IR
24+
TO 220
161466
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
IR
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
IR
05+
TO-220
8000
自己公司全新庫(kù)存絕對(duì)有貨
 詢價(jià)
IOR
2015+
SOP/DIP
19889
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!
 詢價(jià)
更多IRF530供應(yīng)商 更新時(shí)間2024-12-23 17:30:00

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