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IRF630NSPBF

Advanced Process Technology

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF630NSPBF

Advanced Process Technology

IRF

International Rectifier

IRF630NSPBF

Advanced Process Technology

IRF

International Rectifier

IRF630NSPBF

HEXFET Power MOSFET

IRF

International Rectifier

IRF630NSRPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF630NSTRLPBF

AdvancedProcessTechnology

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF630PBF

HEXFETPowerMOSFET(VDSS=200V,RDS(on)=0.40廓,ID=9.0A)

IRF

International Rectifier

IRF630PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導體

IRF630PBF

PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRated

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

KERSEMI

Kersemi Electronic Co., Ltd.

IRF630PBF

9A,200VHeatsinkN-ChannelTypePowerMOSFET

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導體思祁半導體有限公司

IRF630PBF

N-Channel200V(D-S)MOSFET

FEATURES ?175°CJunctionTemperature ?PWMOptimized ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PrimarySideSwitch ?DT-TrenchPowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

IRF630S

N-CHANNEL200V-0.35ohm-9A-D2PAKMESHOVERLAY]MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAYprocess.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=0.35? ■EXTREMELYHIGHdv/dtCAPABILITY ■100A

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

IRF630S

PowerMOSFET

PowerMOSFET VDSS=200V,RDS(on)=0.40ohm,ID=9.0A

TEL

TRANSYS Electronics Limited

IRF630S

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistorusingTrenchtechnology,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

IRF630S

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthe

VishayVishay Siliconix

威世科技威世科技半導體

IRF630S

N-ChannelMOSFET

■Features ●VDS(V)=200V ●ID=9A(VGS=10V) ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

IRF630S

N-channelTrenchMOStransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRF630S

PowerMOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?FastSwitching ?EaseofParalleling ?SimpleDriveRequirements ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

IRF630S

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?Dynamicdv/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatashee

VishayVishay Siliconix

威世科技威世科技半導體

IRF630SPBF

HEXFETPOWERMOSFET(VDSS=200V,RDS(on)=0.40廓,ID=9.0A)

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRF630NSPBF

  • 功能描述：

    MOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
24+
TO-263
107
只做原廠渠道 可追溯貨源
 詢價
IR
23+
TO263
29600
一級分銷商!
 詢價
Infineon(英飛凌)
23+
D2PAK
7793
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
IR
23+
TO-220
18689
詢價
IR
17+
TO-263
6200
100%原裝正品現(xiàn)貨
 詢價
IR
23+
TO-263
8000
專業(yè)優(yōu)勢供應(yīng)
 詢價
IR
2017+
TO-263
6528
只做原裝正品!假一賠十!
 詢價
IR
23+
TO-263
20000
原裝正品,假一罰十
 詢價
I
24+
D2PAK
5000
只做原裝公司現(xiàn)貨
 詢價
Infineon
18+
NA
3000
進口原裝正品優(yōu)勢供應(yīng)QQ3171516190
 詢價
更多IRF630NSPBF供應(yīng)商 更新時間2024-10-25 11:03:00

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