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IRF630NSPBF

Advanced Process Technology

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF630NSPBF

Advanced Process Technology

IRF

International Rectifier

IRF630NSPBF

Advanced Process Technology

IRF

International Rectifier

IRF630NSPBF

HEXFET Power MOSFET

IRF

International Rectifier

IRF630NSRPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF630NSTRLPBF

AdvancedProcessTechnology

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF630PBF

HEXFETPowerMOSFET(VDSS=200V,RDS(on)=0.40廓,ID=9.0A)

IRF

International Rectifier

IRF630PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF630PBF

PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRated

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

KERSEMI

Kersemi Electronic Co., Ltd.

IRF630PBF

9A,200VHeatsinkN-ChannelTypePowerMOSFET

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

詳細(xì)參數(shù)

  • 型號:

    IRF630NSPBF

  • 功能描述:

    MOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IR
24+
TO-263
107
只做原廠渠道 可追溯貨源
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IR
23+
TO263
29600
一級分銷商!
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Infineon(英飛凌)
24+
D2PAK
7793
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
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IR
23+
TO-220
18689
詢價(jià)
IR
17+
TO-263
6200
100%原裝正品現(xiàn)貨
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IR
23+
TO-263
8000
專業(yè)優(yōu)勢供應(yīng)
詢價(jià)
IR
2017+
TO-263
6528
只做原裝正品!假一賠十!
詢價(jià)
IR
23+
TO-263
20000
原裝正品,假一罰十
詢價(jià)
I
24+
D2PAK
5000
只做原裝公司現(xiàn)貨
詢價(jià)
Infineon
24+
NA
3000
進(jìn)口原裝正品優(yōu)勢供應(yīng)
詢價(jià)
更多IRF630NSPBF供應(yīng)商 更新時(shí)間2025-4-26 16:36:00