首頁 >IRF630NSPBF>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRF630NSPBF | Advanced Process Technology Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRF International Rectifier | IRF | |
IRF630NSPBF | Advanced Process Technology | IRF International Rectifier | IRF | |
IRF630NSPBF | Advanced Process Technology | IRF International Rectifier | IRF | |
IRF630NSPBF | HEXFET Power MOSFET | IRF International Rectifier | IRF | |
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET(VDSS=200V,RDS(on)=0.40廓,ID=9.0A) | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
9A,200VHeatsinkN-ChannelTypePowerMOSFET | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半導體思祁半導體有限公司 | THINKISEMI | ||
N-Channel200V(D-S)MOSFET FEATURES ?175°CJunctionTemperature ?PWMOptimized ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PrimarySideSwitch ?DT-TrenchPowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-CHANNEL200V-0.35ohm-9A-D2PAKMESHOVERLAY]MOSFET DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAYprocess.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=0.35? ■EXTREMELYHIGHdv/dtCAPABILITY ■100A | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體(ST)集團 | STMICROELECTRONICS | ||
PowerMOSFET PowerMOSFET VDSS=200V,RDS(on)=0.40ohm,ID=9.0A | TEL TRANSYS Electronics Limited | TEL | ||
N-channelTrenchMOStransistor GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistorusingTrenchtechnology,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthe | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
N-ChannelMOSFET ■Features ●VDS(V)=200V ●ID=9A(VGS=10V) ●RDS(ON) | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | ||
N-channelTrenchMOStransistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產(chǎn)品股份有限公司 | NJSEMI | ||
PowerMOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?FastSwitching ?EaseofParalleling ?SimpleDriveRequirements ?ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
PowerMOSFET FEATURES ?Surface-mount ?Availableintapeandreel ?Dynamicdv/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatashee | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
HEXFETPOWERMOSFET(VDSS=200V,RDS(on)=0.40廓,ID=9.0A) | IRF International Rectifier | IRF |
詳細參數(shù)
- 型號:
IRF630NSPBF
- 功能描述:
MOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
TO-263 |
107 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
IR |
23+ |
TO263 |
29600 |
一級分銷商! |
詢價 | ||
Infineon(英飛凌) |
23+ |
D2PAK |
7793 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
IR |
23+ |
TO-220 |
18689 |
詢價 | |||
IR |
17+ |
TO-263 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-263 |
8000 |
專業(yè)優(yōu)勢供應(yīng) |
詢價 | ||
IR |
2017+ |
TO-263 |
6528 |
只做原裝正品!假一賠十! |
詢價 | ||
IR |
23+ |
TO-263 |
20000 |
原裝正品,假一罰十 |
詢價 | ||
I |
24+ |
D2PAK |
5000 |
只做原裝公司現(xiàn)貨 |
詢價 | ||
Infineon |
18+ |
NA |
3000 |
進口原裝正品優(yōu)勢供應(yīng)QQ3171516190 |
詢價 |
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