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IRF630NSRPBF

Advanced Process Technology

IRF

International Rectifier

IRF630NSTRLPBF

AdvancedProcessTechnology

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF630PBF

HEXFETPowerMOSFET(VDSS=200V,RDS(on)=0.40廓,ID=9.0A)

IRF

International Rectifier

IRF630PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF630PBF

PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRated

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

KERSEMI

Kersemi Electronic Co., Ltd.

IRF630PBF

9A,200VHeatsinkN-ChannelTypePowerMOSFET

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

IRF630PBF

N-Channel200V(D-S)MOSFET

FEATURES ?175°CJunctionTemperature ?PWMOptimized ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PrimarySideSwitch ?DT-TrenchPowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

IRF630S

N-CHANNEL200V-0.35ohm-9A-D2PAKMESHOVERLAY]MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAYprocess.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=0.35? ■EXTREMELYHIGHdv/dtCAPABILITY ■100A

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF630S

PowerMOSFET

PowerMOSFET VDSS=200V,RDS(on)=0.40ohm,ID=9.0A

TEL

TRANSYS Electronics Limited

IRF630S

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistorusingTrenchtechnology,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
1950+
TO-263
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
IR
23+
TO263
15000
全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)
 詢價(jià)
IR
21+
TO-263
30000
只做正品原裝現(xiàn)貨
 詢價(jià)
IRF630NSTR
39600
39600
詢價(jià)
IR
22+
TO-263
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
2023+
TO-263
5800
進(jìn)口原裝,現(xiàn)貨熱賣
 詢價(jià)
IR
23+
TO-263
8000
只做原裝現(xiàn)貨
 詢價(jià)
IR
23+
TO-263
7000
詢價(jià)
MOSFET
2002
100
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
 詢價(jià)
IR
23+
D2PAK
7750
全新原裝優(yōu)勢(shì)
 詢價(jià)
更多IRF630NSRPBF供應(yīng)商 更新時(shí)間2025-2-8 15:48:00

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