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零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRF634	文件：333.68 Kbytes Page：9 Pages	N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY??MOSFET Description UsingthelatesthighvoltageMESHOVERLAY?process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformance.ThenewpatentedSTriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,makesitsuitableincovertersforli	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
IRF634	文件：224.02 Kbytes Page：7 Pages	Advanced Power MOSFET FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=250V ?LowerRDS(ON):0.327?(Typ.)	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRF634	文件：171.6 Kbytes Page：6 Pages	Power MOSFET(Vdss=250V, Rds(on)=0.45ohm, Id=8.1A) Description ThirdInternationalRectifierfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?FastSwitching ?EaseofParalleli	IRF International Rectifier	IRF
IRF634	文件：1.54151 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF634	文件：128.43 Kbytes Page：1 Pages	N-channel mosfet transistor Features ?WithTO-220package ?Simpledriverequirements ?Fastswitching ?VDSS=250V;RDS(ON)≤0.45Ω;ID=8.1A ?1.gate2.drain3.source	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRF634	文件：71.61 Kbytes Page：2 Pages	N-Channel MOSFET Transistor DESCRIPTION ?DrainCurrent-ID=8.1A@TC=25°C ?DrainSourceVoltage- :VDSS=250V(Min) ?StaticDrain-SourceOn-Resistance :RDS(OD=0.45Ω(Max) ?FastSwitchingSpeed ?LowDriveRequirement APPLICATIONS ?Highcurrent,highspeedswitching ?Switchmodepowersupplies ?DC-DCconv	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
IRF634	文件：2.43533 Mbytes Page：31 Pages	SEMICONDUCTORS	etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商	etc2
IRF634	文件：157.84 Kbytes Page：8 Pages	Power MOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF634	文件：326.43 Kbytes Page：14 Pages	N-channel 250V - 0.38廓 - 8A TO-220 /TO-220FP Mesh Overlay??Power MOSFET	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
IRF634A	文件：224.02 Kbytes Page：7 Pages	Advanced Power MOSFET FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=250V ?LowerRDS(ON):0.327?(Typ.)	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRF634B	文件：859.54 Kbytes Page：10 Pages	250V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRF634B	文件：896.45 Kbytes Page：9 Pages	250V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRF634FP	文件：333.68 Kbytes Page：9 Pages	N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY??MOSFET Description UsingthelatesthighvoltageMESHOVERLAY?process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformance.ThenewpatentedSTriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,makesitsuitableincovertersforli	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
IRF634N	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF634N	文件：301.06 Kbytes Page：11 Pages	Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn	IRF International Rectifier	IRF
IRF634NL	文件：301.06 Kbytes Page：11 Pages	Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn	IRF International Rectifier	IRF
IRF634NL	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF634NLPBF	文件：222.71 Kbytes Page：11 Pages	HEXFET Power MOSFET Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn	IRF International Rectifier	IRF
IRF634NLPBF	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF634NPBF	文件：222.71 Kbytes Page：11 Pages	HEXFET Power MOSFET Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn	IRF International Rectifier	IRF

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詳細(xì)參數(shù)

型號(hào)：
IRF634
功能描述：
MOSFET N-Chan 250V 8.0 Amp
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市珩瑞科技有限公司	IRF634	IR	21+	TO-220	6000	原裝正品	詢價(jià)
深圳市坤融電子科技有限公司	IRF634	IR	24+	TO-220	178	只做原廠渠道可追溯貨源	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	IRF634	IR	2021+	TO-220	9000	原裝現(xiàn)貨,隨時(shí)歡迎詢價(jià)	詢價(jià)
柒號(hào)芯城電子商務(wù)(深圳)有限公司	IRF634	IR	2024+	N/A	70000	柒號(hào)只做原裝現(xiàn)貨價(jià)秒殺全網(wǎng)	詢價(jià)
深圳市一線半導(dǎo)體有限公司	IRF634	FAIRCHILD	24+	TO-220	3800		詢價(jià)
深圳市星佑電子有限公司	IRF634	IR	05+	TO-220	5000	自己公司全新庫存絕對(duì)有貨	詢價(jià)
深圳市博浩通科技有限公司	IRF634	IR	23+	TO-220AB	8600	全新原裝現(xiàn)貨	詢價(jià)
深圳市勤思達(dá)科技有限公司	IRF634	IR	15+	TO-220	11560	全新原裝,現(xiàn)貨庫存,長期供應(yīng)	詢價(jià)
深圳市卓越微芯電子有限公司	IRF634	IR	2020+	TO-220	2700	百分百原裝正品真實(shí)公司現(xiàn)貨庫存本公司只做原裝可	詢價(jià)
綠盛電子(香港)有限公司	IRF634	FSC	2015+	TO-220	19889	一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!	詢價(jià)

更多IRF634供應(yīng)商更新時(shí)間2024-12-23 11:18:00

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