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首頁 >IRF634NSPBF>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRF634NSPBF	文件：222.71 Kbytes Page：11 Pages	HEXFET Power MOSFET Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn	IRF International Rectifier	IRF
IRF634NSPBF	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF634NSTRL	文件：162.91 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF634NSTRLPBF	文件：162.91 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF634NSTRR	文件：162.91 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF634NSTRRPBF	文件：162.91 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF634PBF	文件：3.55392 Mbytes Page：7 Pages	HEXFET?PowerMOSFET	IRF International Rectifier	IRF
IRF634PBF	文件：1.54151 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF634PBF	文件：157.84 Kbytes Page：8 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF634S	文件：174.93 Kbytes Page：6 Pages	PowerMOSFET(Vdss=250V,Rds(on)=0.45ohm,Id=8.1A) DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itp	IRF International Rectifier	IRF
IRF634S	文件：176.51 Kbytes Page：9 Pages	AvailableinTapeandReel DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidestheh	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF634S	文件：218.32 Kbytes Page：9 Pages	PowerMOSFET FEATURES ?Surface-mount ?Availableintapeandreel ?Dynamicdv/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatashee	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFI634	文件：649.97 Kbytes Page：9 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFI634B	文件：649.97 Kbytes Page：9 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFI634G	文件：297.18 Kbytes Page：6 Pages	POWERMOSFET Through-HolePackags TO-220FullPak(FullyIsolated)	IRF International Rectifier	IRF
IRFI634G	文件：1.11891 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialappl	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFI634G	文件：1.38223 Mbytes Page：10 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFI634GPBF	文件：1.11891 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialappl	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFI634GPBF	文件：1.38223 Mbytes Page：10 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFS634	文件：886.82 Kbytes Page：7 Pages	N-CHANNELMOSFETinaTO-220FPlasticPackage	FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司	FOSHAN

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詳細(xì)參數(shù)

型號：
IRF634NSPBF
功能描述：
MOSFET N-Chan 250V 8.0 Amp
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市鵬和科技有限公司	IRF634NSPBF	IR	24+	TO-263	5000	全現(xiàn)原裝公司現(xiàn)貨	詢價
深圳市科恒偉業(yè)電子有限公司	IRF634NSPBF	IR	1816+	TO-263	6523	科恒偉業(yè)!只做原裝正品,假一賠十!	詢價
深圳市永貝爾科技有限公司	IRF634NSPbF	IRF	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費送樣	詢價
深圳市科雨電子有限公司	IRF634NSPBF	VISHAY	1503+	TO-263	3000	就找我吧!--邀您體驗愉快問購元件!	詢價
深圳市國宇半導(dǎo)體科技有限公司	IRF634NSPBF	VISHAY/威世	23+	D2PAK	10000	公司只做原裝正品	詢價
深圳市威爾健半導(dǎo)體有限公司	IRF634NSPBF	IR	23+	TO-263	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價
京海半導(dǎo)體(深圳)有限公司	IRF634NSPBF	IR	21+	TO-263	10000	原裝現(xiàn)貨假一罰十	詢價
深圳市河鋒鑫科技有限公司	IRF634NSPBF	Vishay Siliconix	22+	TO2633 D2Pak (2 Leads + Tab) T	9000	原廠渠道,現(xiàn)貨配單	詢價
深圳廊盛科技有限公司	IRF634NSPBF	IR	2022	TO-263	80000	原裝現(xiàn)貨,OEM渠道,歡迎咨詢	詢價
深圳市芯福林電子科技有限公司	IRF634NSPBF	Vishay Siliconix	21+	TO2633 D2Pak (2 Leads + Tab) T	13880	公司只售原裝,支持實單	詢價

更多IRF634NSPBF供應(yīng)商更新時間2024-12-23 10:19:00

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