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IRF5210LPBF

HEXFET Power MOSFET

Description Featuresofthisdesignarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinawidevarietyofotherapplications. ●AdvancedProces

IRF

International Rectifier

IRF5210LPBF

Advanced Process Technology

IRF

International Rectifier

IRF5210PBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRF5210S

PowerMOSFET(Vdss=-100V,Rds(on)=0.06ohm,Id=-40A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF5210S

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF5210S

P-Ch100VFastSwitchingMOSFETs

100EASGuaranteed GreenDeviceAvailable SuperLowGateCharge ExcellentCdV/dteffectdecline AdvancedhighcelldensityTrenchtechnology

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRF5210SPBF

HEXFETPowerMOSFET

Description Featuresofthisdesignarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinawidevarietyofotherapplications. ●AdvancedProces

IRF

International Rectifier

IRF5210SPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF5210SPBF

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF5210STRLPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF5210STRR

AdvancedProcessTechnology

IRF

International Rectifier

IRFG5210

200V,Combination2N-2P-CHANNELHEXFETMOSFETTECHNOLOGY

IRF

International Rectifier

IRFG5210

SimpleDriveRequirements

IRF

International Rectifier

IRFH5210PBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRFH5210PBF

SecondarySideSynchronousRectification

IRF

International Rectifier

IRFH5210TRPBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRFI5210

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFM5210

P-CHANNELMOSFET

SEME-LAB

Seme LAB

IRFN5210

P-CHANNELPOWERMOSFET

?LowRDS(on)PowerMOSFETTransistor,FullyAvalancheRated ?HermeticCeramicSurfaceMountpackage ?DesignedForFastSwitchingApplications ?ScreeningOptionsAvailable

SEME-LAB

Seme LAB

KSM5210

Greendeviceavailable.

KERSEMI

Kersemi Electronic Co., Ltd.

詳細(xì)參數(shù)

  • 型號(hào):

    IRF5210LPBF

  • 功能描述:

    MOSFET MOSFT PCh -100V -0.4A 60mOhm 120nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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Infineon Technologies
24+
TO-262
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
詢價(jià)
Infineon(英飛凌)
23+
TO-262
8498
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
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IR
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
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Infineon
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190
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IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
IR
23+
TO-262-3
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價(jià)
International Rectifier
2022+
1260
全新原裝 貨期兩周
詢價(jià)
IR
21+
65230
詢價(jià)
Infineon
1931+
N/A
1749
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Infineon(英飛凌)
2112+
TO262
115000
1000個(gè)/管一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)
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更多IRF5210LPBF供應(yīng)商 更新時(shí)間2024-12-23 20:18:00