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IDT70T653MS12BCI

HIGH-SPEED 2.5V 512K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

Description TheIDT70T653Misahigh-speed512Kx36AsynchronousDual-PortStaticRAM.TheIDT70T653Misdesignedtobeusedasastand-alone18874K-bitDual-PortRAM.Thisdeviceprovidestwoindependentportswithseparatecontrol,address,andI/Opinsthatpermitindependent,asynchronousac

IDT

Integrated Device Technology, Inc.

70T653MS12BC

HIGH-SPEED2.5V512Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansionwi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T653MS12BCG

HIGH-SPEED2.5V512Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T653MS12BCG

HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T653MS12BCGI

HIGH-SPEED2.5V512Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T653MS12BCGI

HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T653MS12BCGI

HIGH-SPEED2.5V512Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansionwi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T653MS12BCI

HIGH-SPEED2.5V512Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansionwi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT70T653MS12BC

HIGH-SPEED2.5V512Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE

Description TheIDT70T653Misahigh-speed512Kx36AsynchronousDual-PortStaticRAM.TheIDT70T653Misdesignedtobeusedasastand-alone18874K-bitDual-PortRAM.Thisdeviceprovidestwoindependentportswithseparatecontrol,address,andI/Opinsthatpermitindependent,asynchronousac

IDT

Integrated Device Technology, Inc.

詳細參數

  • 型號:

    IDT70T653MS12BCI

  • 功能描述:

    IC SRAM 18MBIT 12NS 256BGA

  • RoHS:

  • 類別:

    集成電路(IC) >> 存儲器

  • 系列:

    -

  • 標準包裝:

    3,000

  • 系列:

    - 格式 -

  • 存儲器:

    EEPROMs - 串行

  • 存儲器類型:

    EEPROM

  • 存儲容量:

    8K(1K x 8)

  • 速度:

    400kHz

  • 接口:

    I²C,2 線串口

  • 電源電壓:

    1.7 V ~ 5.5 V

  • 工作溫度:

    -40°C ~ 85°C

  • 封裝/外殼:

    8-SOIC(0.154,3.90mm 寬)

  • 供應商設備封裝:

    8-SOIC

  • 包裝:

    帶卷(TR)

供應商型號品牌批號封裝庫存備注價格
IDT
24+
BGA
8000
只做原裝正品現(xiàn)貨
詢價
IDT
24+
BGA
23000
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
詢價
IDT
16+
BGA
8800
進口原裝大量現(xiàn)貨熱賣中
詢價
IDT
23+
256-CABGA(17x17)
3200
專業(yè)分銷產品!原裝正品!價格優(yōu)勢!
詢價
IDT
23+
BGA
5000
原裝正品,假一罰十
詢價
IDT
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
IDT
23+
BGA256
8560
受權代理!全新原裝現(xiàn)貨特價熱賣!
詢價
IDT
13+
BGA
1350
全新進口原裝
詢價
IDT
11+
QFP
450
原裝正品
詢價
IDT
20+
BGA
35830
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
更多IDT70T653MS12BCI供應商 更新時間2025-1-21 13:48:00