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IDT70T659S10BFI

HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

Description TheIDT70T651/9isahigh-speed256/128Kx36AsynchronousDual-PortStaticRAM.TheIDT70T651/9isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM

IDT

Integrated Device Technology, Inc.

70T659S10BC

HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T659S10BCG

HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T659S10BCG

HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T659S10BCGI

HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T659S10BCGI

HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T659S10BCI

HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T659S10BFG

HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T659S10BFG

HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T659S10BFGI

HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

詳細參數(shù)

  • 型號：

    IDT70T659S10BFI

  • 功能描述：

    IC SRAM 4MBIT 10NS 208FBGA

  • RoHS：

    否

  • 類別：

    集成電路(IC) >> 存儲器

  • 系列：

    -

  • 標準包裝：

    3,000

  • 系列：

    - 格式 -

  • 存儲器：

    EEPROMs - 串行

  • 存儲器類型：

    EEPROM

  • 存儲容量：

    8K(1K x 8)

  • 速度：

    400kHz

  • 接口：

    I²C，2 線串口

  • 電源電壓：

    1.7 V ~ 5.5 V

  • 工作溫度：

    -40°C ~ 85°C

  • 封裝/外殼：

    8-SOIC（0.154，3.90mm 寬）

  • 供應商設備封裝：

    8-SOIC

  • 包裝：

    帶卷(TR)

供應商型號品牌批號封裝庫存備注價格
IDT
23+
208-CABGA(15x15)
7050
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢!
 詢價
IDT
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IDT
22+
208CABGA (15x15)
9000
原廠渠道,現(xiàn)貨配單
 詢價
IDT
21+
208CABGA (15x15)
13880
公司只售原裝,支持實單
 詢價
IDT
23+
208CABGA (15x15)
9000
原裝正品，支持實單
 詢價
IDT
2022+
BGA
57550
詢價
IDT
24+
208FBGA
3601
原裝現(xiàn)貨
 詢價
更多IDT70T659S10BFI供應商 更新時間2025-1-21 10:28:00

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