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IDT70V659S10DR

HIGH-SPEED 3.3V 128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

Description TheIDT70V659/58/57isahigh-speed128/64/32Kx36AsynchronousDual-PortStaticRAM.TheIDT70V659/58/57isdesignedtobeusedasastand-alone4/2/1MbitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTERSLAVEDual-Por

IDT

Integrated Device Technology, Inc.

IDT70V659S10DR

HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

Description TheIDT70V659/58/57isahigh-speed128/64/32Kx36AsynchronousDual-PortStaticRAM.TheIDT70V659/58/57isdesignedtobeusedasastand-alone4/2/1MbitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTERSLAVEDual-Por

IDT

Integrated Device Technology, Inc.

IDT70V659S10DRI

HIGH-SPEED 3.3V 128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

Description TheIDT70V659/58/57isahigh-speed128/64/32Kx36AsynchronousDual-PortStaticRAM.TheIDT70V659/58/57isdesignedtobeusedasastand-alone4/2/1MbitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTERSLAVEDual-Por

IDT

Integrated Device Technology, Inc.

IDT70V659S10DRI

HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

Description TheIDT70V659/58/57isahigh-speed128/64/32Kx36AsynchronousDual-PortStaticRAM.TheIDT70V659/58/57isdesignedtobeusedasastand-alone4/2/1MbitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTERSLAVEDual-Por

IDT

Integrated Device Technology, Inc.

70V659S10BC

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V659/58/57easilyexpandsdatabuswi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V659S10BCG

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V659S10BCG

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V659S10BCG

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V659/58/57easilyexpandsdatabuswi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V659S10BCGI

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V659S10BF

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V659/58/57easilyexpandsdatabuswi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V659S10BFG

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V659/58/57easilyexpandsdatabuswi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V659S10BFG

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V659S10BFG

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V659S10BFGI

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V659S10DRG

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V659/58/57easilyexpandsdatabuswi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V659S10DRG

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V659S10DRG

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V659S10DRGI

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

IDT70V659S10BC

HIGH-SPEED3.3V128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

Description TheIDT70V659/58/57isahigh-speed128/64/32Kx36AsynchronousDual-PortStaticRAM.TheIDT70V659/58/57isdesignedtobeusedasastand-alone4/2/1MbitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTERSLAVEDual-Por

IDT

Integrated Device Technology, Inc.

IDT70V659S10BC

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

Description TheIDT70V659/58/57isahigh-speed128/64/32Kx36AsynchronousDual-PortStaticRAM.TheIDT70V659/58/57isdesignedtobeusedasastand-alone4/2/1MbitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTERSLAVEDual-Por

IDT

Integrated Device Technology, Inc.

詳細參數(shù)

  • 型號:

    IDT70V659S10DR

  • 功能描述:

    IC SRAM 4MBIT 10NS 208QFP

  • RoHS:

  • 類別:

    集成電路(IC) >> 存儲器

  • 系列:

    -

  • 標準包裝:

    3,000

  • 系列:

    - 格式 -

  • 存儲器:

    EEPROMs - 串行

  • 存儲器類型:

    EEPROM

  • 存儲容量:

    8K(1K x 8)

  • 速度:

    400kHz

  • 接口:

    I²C,2 線串口

  • 電源電壓:

    1.7 V ~ 5.5 V

  • 工作溫度:

    -40°C ~ 85°C

  • 封裝/外殼:

    8-SOIC(0.154,3.90mm 寬)

  • 供應(yīng)商設(shè)備封裝:

    8-SOIC

  • 包裝:

    帶卷(TR)

供應(yīng)商型號品牌批號封裝庫存備注價格
IDT
23+
208-PQFP(28x28)
73390
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢!
詢價
IDT
23+
208PQFP
9526
詢價
IDT
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
IDT
23+
QFP208
1500
原裝正品代理渠道價格優(yōu)勢
詢價
IDT
22+
208PQFP
9000
原廠渠道,現(xiàn)貨配單
詢價
IDT
21+
208PQFP
13880
公司只售原裝,支持實單
詢價
IDT
2021+
QFP208
1500
十年專營原裝現(xiàn)貨,假一賠十
詢價
IDT
23+
208PQFP
9000
原裝正品,支持實單
詢價
IDT
0651+
2
原裝現(xiàn)貨 實單可談
詢價
IDT
22+
BGAZ
1200
原裝現(xiàn)貨熱賣中,提供一站式真芯服務(wù)
詢價
更多IDT70V659S10DR供應(yīng)商 更新時間2025-1-1 16:30:00