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IDT70V659S12DR中文資料IDT數(shù)據(jù)手冊(cè)PDF規(guī)格書

IDT70V659S12DR
廠商型號(hào)

IDT70V659S12DR

功能描述

HIGH-SPEED 3.3V 128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

文件大小

194.05 Kbytes

頁面數(shù)量

23

生產(chǎn)廠商 Integrated Device Technology, Inc.
企業(yè)簡(jiǎn)稱

IDT

中文名稱

Integrated Device Technology, Inc.官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-11 14:18:00

IDT70V659S12DR規(guī)格書詳情

Description

The IDT70V659/58/57 is a high-speed 128/64/32K x 36 Asynchronous Dual-Port Static RAM. The IDT70V659/58/57 is designed to be used as a stand-alone 4/2/1Mbit Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTERSLAVE Dual-Port RAM approach in 72-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic.

Features

◆ True Dual-Port memory cells which allow simultaneous access of the same memory location

◆ High-speed access

– Commercial: 10/12/15ns (max.)

– Industrial: 12/15ns (max.)

◆ Dual chip enables allow for depth expansion without external logic

◆ IDT70V659/58/57 easily expands data bus width to 72 bits or more using the Master/Slave select when cascading more than one device

◆ M/S = VIH for BUSY output flag on Master, M/S = VIL for BUSY input on Slave

◆ Busy and Interrupt Flags

◆ On-chip port arbitration logic

◆ Full on-chip hardware support of semaphore signaling between ports

◆ Fully asynchronous operation from either port

◆ Separate byte controls for multiplexed bus and bus matching compatibility

◆ Supports JTAG features compliant to IEEE 1149.1

◆ LVTTL-compatible, single 3.3V (±150mV) power supply for core

◆ LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV) power supply for I/Os and control signals on each port

◆ Available in a 208-pin Plastic Quad Flatpack, 208-ball fine pitch Ball Grid Array, and 256-ball Ball Grid Array

◆ Industrial temperature range (–40°C to +85°C) is available for selected speeds

產(chǎn)品屬性

  • 型號(hào):

    IDT70V659S12DR

  • 功能描述:

    IC SRAM 4MBIT 12NS 208QFP

  • RoHS:

  • 類別:

    集成電路(IC) >> 存儲(chǔ)器

  • 系列:

    -

  • 標(biāo)準(zhǔn)包裝:

    2,500

  • 系列:

    - 格式 -

  • 存儲(chǔ)器:

    EEPROMs - 串行

  • 存儲(chǔ)器類型:

    EEPROM

  • 存儲(chǔ)容量:

    1K(128 x 8)

  • 速度:

    100kHz

  • 接口:

    UNI/O?(單線)

  • 電源電壓:

    1.8 V ~ 5.5 V

  • 工作溫度:

    -40°C ~ 85°C

  • 封裝/外殼:

    8-TSSOP,8-MSOP(0.118,3.00mm 寬)

  • 供應(yīng)商設(shè)備封裝:

    8-MSOP

  • 包裝:

    帶卷(TR)

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