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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IDT7164S20TPI	文件：100 bytes Page：1 Pages	包裝：管件封裝/外殼：28-DIP（0.300"，7.62mm）類別：集成電路（IC）存儲器描述：IC SRAM 64KBIT PARALLEL 28DIP	Renesas Electronics America Inc Renesas Electronics America Inc	Renesas Electronics America Inc
7164S20DB	文件：213.71 Kbytes Page：12 Pages	CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
7164S20DGI	文件：749.13 Kbytes Page：10 Pages	CMOSStaticRAM64K	IDT Integrated Device Technology, Inc.	IDT
7164S20TDB	文件：213.71 Kbytes Page：12 Pages	CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
7164S20TDGI	文件：749.13 Kbytes Page：10 Pages	CMOSStaticRAM64K	IDT Integrated Device Technology, Inc.	IDT
7164S20TPG	文件：213.71 Kbytes Page：12 Pages	CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
7164S20TPGI	文件：213.71 Kbytes Page：12 Pages	CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
7164S20TPGI	文件：749.13 Kbytes Page：10 Pages	CMOSStaticRAM64K	IDT Integrated Device Technology, Inc.	IDT
7164S20YG	文件：213.71 Kbytes Page：12 Pages	CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
7164S20YGI	文件：213.71 Kbytes Page：12 Pages	CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
7164S20YGI	文件：749.13 Kbytes Page：10 Pages	CMOSStaticRAM64K	IDT Integrated Device Technology, Inc.	IDT
IDT7164S20D	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDT Integrated Device Technology, Inc.	IDT
IDT7164S20DB	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDT Integrated Device Technology, Inc.	IDT
IDT7164S20P	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDT Integrated Device Technology, Inc.	IDT
IDT7164S20PB	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDT Integrated Device Technology, Inc.	IDT
IDT7164S20TD	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDT Integrated Device Technology, Inc.	IDT
IDT7164S20TDB	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDT Integrated Device Technology, Inc.	IDT
IDT7164S20TP	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDT Integrated Device Technology, Inc.	IDT
IDT7164S20TPB	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDT Integrated Device Technology, Inc.	IDT
IDT7164S20Y	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDT Integrated Device Technology, Inc.	IDT

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產(chǎn)品屬性

產(chǎn)品編號：
IDT7164S20TPI
制造商：
Renesas Electronics America Inc
類別：
集成電路（IC） > 存儲器
包裝：
管件
存儲器類型：
易失
存儲器格式：
SRAM
技術(shù)：
SRAM - 異步
存儲容量：
64Kb（8K x 8）
存儲器接口：
并聯(lián)
寫周期時間 - 字，頁：
20ns
電壓 - 供電：
4.5V ~ 5.5V
工作溫度：
-40°C ~ 85°C（TA）
安裝類型：
通孔
封裝/外殼：
28-DIP（0.300"，7.62mm）
供應(yīng)商器件封裝：
28-PDIP
描述：
IC SRAM 64KBIT PARALLEL 28DIP

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市毅創(chuàng)騰電子科技有限公司	IDT7164S20TPI	IDT	23+	28-PDIP	36430	專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢!	詢價
瀚佳科技(深圳)有限公司	IDT7164S20TPI	IDT, Integrated Device Technol	24+	28-PDIP	56200	一級代理/放心采購	詢價
深圳市科雨電子有限公司	IDT7164S20TPI	IDT	20+	DIP-28	1001	就找我吧!--邀您體驗愉快問購元件!	詢價
深圳市河鋒鑫科技有限公司	IDT7164S20TPI	IDT	22+	28PDIP	9000	原廠渠道,現(xiàn)貨配單	詢價
深圳市芯福林電子科技有限公司	IDT7164S20TPI	IDT	21+	28PDIP	13880	公司只售原裝,支持實單	詢價
易創(chuàng)佳業(yè)科技（深圳）有限公司	IDT7164S20TPI	IDT	23+	28PDIP	9000	原裝正品，支持實單	詢價
深圳市創(chuàng)新跡電子有限公司	IDT7164S20TPI	IDT, Integrated Device Techno	23+	28-PDIP	7300	專注配單,只做原裝進口現(xiàn)貨	詢價
深圳市安富世紀電子有限公司	IDT7164S20TPI	IDT, Integrated Device Techno	23+	28-PDIP	7300	專注配單,只做原裝進口現(xiàn)貨	詢價
深圳市宏捷佳電子科技有限公司	IDT7164S20TPI	Renesas Electronics America In	24+	28-DIP(0.300 7.62mm)	9350	獨立分銷商公司只做原裝誠心經(jīng)營免費試樣正品保證	詢價
深圳市威爾健半導(dǎo)體有限公司	IDT7164S20TPIDT7164S20TPGI	IDT	23+	DIP	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價

更多IDT7164S20TPI供應(yīng)商更新時間2024-12-28 16:30:00

產(chǎn)品屬性

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