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IDT7164S25TDB中文資料IDT數(shù)據(jù)手冊PDF規(guī)格書

IDT7164S25TDB
廠商型號

IDT7164S25TDB

功能描述

CMOS STATIC RAM 64K (8K x 8-BIT)

文件大小

104.93 Kbytes

頁面數(shù)量

9

生產(chǎn)廠商 Integrated Device Technology, Inc.
企業(yè)簡稱

IDT

中文名稱

Integrated Device Technology, Inc.官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-11-17 20:00:00

IDT7164S25TDB規(guī)格書詳情

Description

The IDT7164 is a 65,536 bit high-speed static RAM organized as 8K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology.

Address access times as fast as 15ns are available and the circuit offers a reduced power standby mode. When CS1 goes HIGH or CS2 goes LOW, the circuit will automatically go to, and remain in, a low power stand by mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V.

All inputs and outputs of the IDT7164 are TTL-compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation.

The IDT7164 is packaged in a 28-pin 300 mil DIP and SOJ and a 28-pin 600 mil CERDIP.

Military grade product is manufactured in compliance with the latest revision of MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability.

Features

◆ High-speed address/chip select access time

– Military: 20/25/35/45/55/70/85/100ns (max.)

– Industrial: 25/35ns (max.)

– Commercial: 15/20/25/35ns (max.)

◆ Low power consumption

◆ Battery backup operation – 2V data retention voltage (L Version only)

◆ Produced with advanced CMOS high-performance technology

◆ Inputs and outputs directly TTL-compatible

◆ Three-state outputs

◆ Available in 28-pin DIP, CERDIP and SOJ

◆ Military product compliant to MIL-STD-883, Class B

產(chǎn)品屬性

  • 型號:

    IDT7164S25TDB

  • 制造商:

    Integrated Device Technology Inc

  • 功能描述:

    IC SRAM 64KBIT 25NS 28CDIP

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