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IDT7164S35Y

CMOS STATIC RAM 64K (8K x 8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164S35YB

CMOS STATIC RAM 64K (8K x 8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164S35YG8

包裝:管件 封裝/外殼:28-BSOJ(0.300",7.62mm 寬) 類別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 64KBIT PARALLEL 28SOJ

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

IDT7164S35YGI

包裝:管件 封裝/外殼:28-BSOJ(0.300",7.62mm 寬) 類別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 64KBIT PARALLEL 28SOJ

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

IDT7164S35YGI8

包裝:管件 封裝/外殼:28-BSOJ(0.300",7.62mm 寬) 類別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 64KBIT PARALLEL 28SOJ

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

7164S35DB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

7164S35DGI

CMOSStaticRAM64K

IDT

Integrated Device Technology, Inc.

7164S35TDB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

7164S35TDGI

CMOSStaticRAM64K

IDT

Integrated Device Technology, Inc.

7164S35TPGI

CMOSStaticRAM64K

IDT

Integrated Device Technology, Inc.

7164S35YGI

CMOSStaticRAM64K

IDT

Integrated Device Technology, Inc.

IDT7164S35D

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164S35DB

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164S35P

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164S35PB

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164S35TD

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164S35TDB

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164S35TP

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164S35TPB

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

詳細(xì)參數(shù)

  • 型號(hào):

    IDT7164S35Y

  • 功能描述:

    IC SRAM 64KBIT 35NS 28SOJ

  • RoHS:

  • 類別:

    集成電路(IC) >> 存儲(chǔ)器

  • 系列:

    -

  • 產(chǎn)品變化通告:

    Product Discontinuation 26/Apr/2010

  • 標(biāo)準(zhǔn)包裝:

    136

  • 系列:

    - 格式 -

  • 存儲(chǔ)器:

    RAM

  • 存儲(chǔ)器類型:

    SRAM - 同步,DDR II

  • 存儲(chǔ)容量:

    18M(1M x 18)

  • 速度:

    200MHz

  • 接口:

    并聯(lián)

  • 電源電壓:

    1.7 V ~ 1.9 V

  • 工作溫度:

    0°C ~ 70°C

  • 封裝/外殼:

    165-TBGA

  • 供應(yīng)商設(shè)備封裝:

    165-CABGA(13x15)

  • 包裝:

    托盤(pán)

  • 其它名稱:

    71P71804S200BQ

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IDT
05+
原廠原裝
4322
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價(jià)
IDT
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
IDT
13+
NA
2630
全新進(jìn)口原裝
詢價(jià)
IDT
23+
SOJ
65480
詢價(jià)
IDT
23+
NA
2630
原裝正品代理渠道價(jià)格優(yōu)勢(shì)
詢價(jià)
IDT
2021+
SMD
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
詢價(jià)
IDT
23+
QFP
3200
全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷售
詢價(jià)
IDT
23+
SOJ-28P
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)
IDT
2021+
NA
2630
十年專營(yíng)原裝現(xiàn)貨,假一賠十
詢價(jià)
IDT
23+
NA
20000
全新原裝假一賠十
詢價(jià)
更多IDT7164S35Y供應(yīng)商 更新時(shí)間2024-12-29 9:16:00