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IDT7164S35Y集成電路(IC)的存儲器規(guī)格書PDF中文資料

IDT7164S35Y
廠商型號

IDT7164S35Y

參數(shù)屬性

IDT7164S35Y 封裝/外殼為28-BSOJ(0.300",7.62mm 寬);包裝為管件;類別為集成電路(IC)的存儲器;產品描述:IC SRAM 64KBIT PARALLEL 28SOJ

功能描述

CMOS STATIC RAM 64K (8K x 8-BIT)

封裝外殼

28-BSOJ(0.300",7.62mm 寬)

文件大小

104.93 Kbytes

頁面數(shù)量

9

生產廠商 Integrated Device Technology, Inc.
企業(yè)簡稱

IDT

中文名稱

Integrated Device Technology, Inc.官網

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-3-3 20:00:00

人工找貨

IDT7164S35Y價格和庫存,歡迎聯(lián)系客服免費人工找貨

IDT7164S35Y規(guī)格書詳情

Description

The IDT7164 is a 65,536 bit high-speed static RAM organized as 8K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology.

Address access times as fast as 15ns are available and the circuit offers a reduced power standby mode. When CS1 goes HIGH or CS2 goes LOW, the circuit will automatically go to, and remain in, a low power stand by mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V.

All inputs and outputs of the IDT7164 are TTL-compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation.

The IDT7164 is packaged in a 28-pin 300 mil DIP and SOJ and a 28-pin 600 mil CERDIP.

Military grade product is manufactured in compliance with the latest revision of MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability.

Features

◆ High-speed address/chip select access time

– Military: 20/25/35/45/55/70/85/100ns (max.)

– Industrial: 25/35ns (max.)

– Commercial: 15/20/25/35ns (max.)

◆ Low power consumption

◆ Battery backup operation – 2V data retention voltage (L Version only)

◆ Produced with advanced CMOS high-performance technology

◆ Inputs and outputs directly TTL-compatible

◆ Three-state outputs

◆ Available in 28-pin DIP, CERDIP and SOJ

◆ Military product compliant to MIL-STD-883, Class B

產品屬性

  • 產品編號:

    IDT7164S35YG8

  • 制造商:

    Renesas Electronics America Inc

  • 類別:

    集成電路(IC) > 存儲器

  • 包裝:

    管件

  • 存儲器類型:

    易失

  • 存儲器格式:

    SRAM

  • 技術:

    SRAM - 異步

  • 存儲容量:

    64Kb(8K x 8)

  • 存儲器接口:

    并聯(lián)

  • 寫周期時間 - 字,頁:

    35ns

  • 電壓 - 供電:

    4.5V ~ 5.5V

  • 工作溫度:

    0°C ~ 70°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    28-BSOJ(0.300",7.62mm 寬)

  • 供應商器件封裝:

    28-SOJ

  • 描述:

    IC SRAM 64KBIT PARALLEL 28SOJ

供應商 型號 品牌 批號 封裝 庫存 備注 價格
IDT
23+
NA/
1254
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
詢價
IDT
09+
SOP
1639
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
IDT
24+
SOP
20000
全新原廠原裝,進口正品現(xiàn)貨,正規(guī)渠道可含稅??!
詢價
IDT
2016+
SOP28
3900
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價
IDT
23+
QFP
3200
全新原裝、誠信經營、公司現(xiàn)貨銷售
詢價
IDT
2017+
SOP
6528
只做原裝正品!假一賠十!
詢價
IDT
23+
SOJ-28P
10000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
IDT
2021+
NA
2630
十年專營原裝現(xiàn)貨,假一賠十
詢價
IDT
21+
28SOJ
13880
公司只售原裝,支持實單
詢價
IDT
2223+
SOP28
26800
只做原裝正品假一賠十為客戶做到零風險
詢價