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IDT71T75602S133PFI

512K x 36, 1M x 18 2.5V Synchronous ZBT??SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

IDT

Integrated Device Technology, Inc.

IDT71T75602S133PFI

包裝：卷帶（TR） 封裝/外殼：100-LQFP 類別：集成電路（IC） 存儲器 描述：IC SRAM 18MBIT PARALLEL 100TQFP

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

IDT71T75602S133PFI8

包裝：卷帶（TR） 封裝/外殼：100-LQFP 類別：集成電路（IC） 存儲器 描述：IC SRAM 18MBIT PARALLEL 100TQFP

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

71T75602S133BG

2.5VSynchronousZBTSRAMsI/O,BurstCounterPipelinedOutputs

IDT

Integrated Device Technology, Inc.

71T75602S133BG

512Kx36,1Mx182.5VSynchronousZBT?SRAMs2.5VI/O,BurstCounterPipelinedOutputs

Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71T75602S133BGG

512Kx36,1Mx182.5VSynchronousZBT?SRAMs2.5VI/O,BurstCounterPipelinedOutputs

Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71T75602S133BGG

2.5VSynchronousZBTSRAMsI/O,BurstCounterPipelinedOutputs

IDT

Integrated Device Technology, Inc.

71T75602S133BGGI

2.5VSynchronousZBTSRAMsI/O,BurstCounterPipelinedOutputs

IDT

Integrated Device Technology, Inc.

71T75602S133BGGI

512Kx36,1Mx182.5VSynchronousZBT?SRAMs2.5VI/O,BurstCounterPipelinedOutputs

Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71T75602S133BGI

512Kx36,1Mx182.5VSynchronousZBT?SRAMs2.5VI/O,BurstCounterPipelinedOutputs

Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71T75602S133BGI

2.5VSynchronousZBTSRAMsI/O,BurstCounterPipelinedOutputs

IDT

Integrated Device Technology, Inc.

71T75602S133PFG

2.5VSynchronousZBTSRAMsI/O,BurstCounterPipelinedOutputs

IDT

Integrated Device Technology, Inc.

71T75602S133PFG

512Kx36,1Mx182.5VSynchronousZBT?SRAMs2.5VI/O,BurstCounterPipelinedOutputs

Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71T75602S133PFGI

512Kx36,1Mx182.5VSynchronousZBT?SRAMs2.5VI/O,BurstCounterPipelinedOutputs

Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71T75602S133PFGI

2.5VSynchronousZBTSRAMsI/O,BurstCounterPipelinedOutputs

IDT

Integrated Device Technology, Inc.

IDT71T75602S133BG

512Kx36,1Mx182.5VSynchronousZBT??SRAMs2.5VI/O,BurstCounterPipelinedOutputs

IDT

Integrated Device Technology, Inc.

IDT71T75602S133BGI

512Kx36,1Mx182.5VSynchronousZBT??SRAMs2.5VI/O,BurstCounterPipelinedOutputs

IDT

Integrated Device Technology, Inc.

IDT71T75602S133PF

512Kx36,1Mx182.5VSynchronousZBT??SRAMs2.5VI/O,BurstCounterPipelinedOutputs

IDT

Integrated Device Technology, Inc.

產(chǎn)品屬性

  • 產(chǎn)品編號：

    IDT71T75602S133PFI

  • 制造商：

    Renesas Electronics America Inc

  • 類別：

    集成電路（IC） > 存儲器

  • 包裝：

    卷帶（TR）

  • 存儲器類型：

    易失

  • 存儲器格式：

    SRAM

  • 技術(shù)：

    SRAM - 同步，SDR（ZBT）

  • 存儲容量：

    18Mb（512K x 36）

  • 存儲器接口：

    并聯(lián)

  • 電壓 - 供電：

    2.375V ~ 2.625V

  • 工作溫度：

    -40°C ~ 85°C（TA）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    100-LQFP

  • 供應(yīng)商器件封裝：

    100-TQFP（14x14）

  • 描述：

    IC SRAM 18MBIT PARALLEL 100TQFP

供應(yīng)商型號品牌批號封裝庫存備注價格
IDT
23+
100TQFP
9526
詢價
IDT
23+
100-TQFP(14x14)
73390
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢!
 詢價
IDT
17+
QFP
6200
100%原裝正品現(xiàn)貨
 詢價
IDT
2017+
QFP
6528
只做原裝正品!假一賠十!
 詢價
IDT
05+
原廠原裝
4243
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價
IDT
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價
IDT
23+
QFP
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
IDT
21+
QFP
12588
原裝正品,自己庫存 假一罰十
 詢價
IDT
22+
QFP
19608
原裝正品現(xiàn)貨
 詢價
IDT
23+
QFP
20000
詢價
更多IDT71T75602S133PFI供應(yīng)商 更新時間2025-1-1 15:12:00

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