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IDT71V124	文件：66.63 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124S15	文件：66.63 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124S15Y	文件：66.63 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124S15YI	文件：66.63 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124S20	文件：66.63 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124S20Y	文件：66.63 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124S20YI	文件：66.63 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA10	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA10PH	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA10PHI	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA10TY	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA10TYI	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA10Y	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA10YI	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA12	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA12PH	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA12PHI	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA12TY	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA12TYI	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT

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詳細(xì)參數(shù)

型號(hào)：
IDT71V124
功能描述：
IC SRAM 1MBIT 10NS 32TSOP
RoHS：
否
類別：
集成電路(IC) >> 存儲(chǔ)器
系列：
-
產(chǎn)品變化通告：
Product Discontinuation 05/Nov/2008
標(biāo)準(zhǔn)包裝：
84
系列：
- 格式 -
存儲(chǔ)器：
RAM
存儲(chǔ)器類型：
SRAM - 同步 ZBT
存儲(chǔ)容量：
4.5M（128K x 36）
速度：
75ns
接口：
并聯(lián)
電源電壓：
3.135 V ~ 3.465 V
工作溫度：
-40°C ~ 85°C
封裝/外殼：
119-BGA
供應(yīng)商設(shè)備封裝：
119-PBGA（14x22）
包裝：
托盤
其它名稱：
71V3557SA75BGI

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市博浩通科技有限公司	IDT71V124	進(jìn)口原裝	23+	SOJ	2642	全新原裝現(xiàn)貨	詢價(jià)
深圳市永貝爾科技有限公司	IDT71V124	IDT	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
深圳市壹芯創(chuàng)科技有限公司	IDT71V124	IDT	22+	TSOP	2000	原裝正品現(xiàn)貨	詢價(jià)
深圳市佳鑫美電子科技有限公司	IDT71V124	IDT	22+	TSOP32	3629	原裝優(yōu)勢(shì)!房間現(xiàn)貨!歡迎來電!	詢價(jià)
深圳市昊創(chuàng)電子有限公司	IDT71V124	IDT	15+	TSOP	6328	全新原裝	詢價(jià)
深圳市銳視安科技有限公司	IDT71V124	IDT	99/00	TSOP32	513	特價(jià)銷售歡迎來電!!	詢價(jià)
中天科工半導(dǎo)體（深圳）有限公司	IDT71V124	IDT	20+	SOP	35830	原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票	詢價(jià)
深圳市維爾達(dá)電子有限公司	IDT71V124	IDT	2023+	SOJ32	80000	一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品	詢價(jià)
瀚佳科技(深圳)有限公司	IDT71V124	IDT	21+	SOJ32	35400	全新原裝現(xiàn)貨/假一罰百!	詢價(jià)
艾睿國(guó)際（香港）有限公司	IDT71V124	N/A	2021+	SMD	100500	一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨	詢價(jià)

更多IDT71V124供應(yīng)商更新時(shí)間2024-11-14 14:02:00

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