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IDT71V124SA	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA10	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA10PH	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA10PHI	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA10TY	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA10TYI	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA10Y	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA10YI	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA12	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA12PH	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA12PHI	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA12TY	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA12TYI	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA12Y	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA12YI	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA15	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA15PH	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA15PHI	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA15TY	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA15TYI	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT

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詳細參數(shù)

型號：
IDT71V124SA
功能描述：
IC SRAM 1MBIT 10NS 32TSOP
RoHS：
否
類別：
集成電路(IC) >> 存儲器
系列：
-
產(chǎn)品變化通告：
Product Discontinuation 05/Nov/2008
標準包裝：
84
系列：
- 格式 -
存儲器：
RAM
存儲器類型：
SRAM - 同步 ZBT
存儲容量：
4.5M（128K x 36）
速度：
75ns
接口：
并聯(lián)
電源電壓：
3.135 V ~ 3.465 V
工作溫度：
-40°C ~ 85°C
封裝/外殼：
119-BGA
供應商設備封裝：
119-PBGA（14x22）
包裝：
托盤
其它名稱：
71V3557SA75BGI

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市永貝爾科技有限公司	IDT71V124SA	IDT	23+	NA	19960	只做進口原裝,終端工廠免費送樣	詢價
深圳市創(chuàng)新跡電子有限公司	IDT71V124SA	IDT	23+	SSOP	6500	專注配單,只做原裝進口現(xiàn)貨	詢價
深圳市安富世紀電子有限公司	IDT71V124SA	IDT	23+	SSOP	6500	專注配單,只做原裝進口現(xiàn)貨	詢價
深圳市益百分電子有限公司	IDT71V124SA12TY	IDT	SOJ32		6	全新原裝進口自己庫存優(yōu)勢	詢價
深圳市勤思達科技有限公司	IDT71V124SA12TY	IDT	1430+	SOJ	5800	全新原裝,公司大量現(xiàn)貨供應,絕對正品	詢價
深圳市聯(lián)世界科技有限公司（原深創(chuàng)輝科技）	IDT71V124SA-12Y	IDT	1998		226	原裝正品長期供貨，如假包賠包換徐小姐13714450367	詢價
深圳市凱斯宇科技有限公司	IDT71V124SA12PH	IDT	2022	TSOP	5280	原廠原裝正品,價格超越代理	詢價
深圳市福安甌科技有限公司	IDT71V124SA12TY	IDT	22+	SOJ32	1000	⊙⊙新加坡大量現(xiàn)貨庫存,深圳常備現(xiàn)貨!歡迎查詢!⊙	詢價
深圳市一線半導體有限公司	IDT71V124SA15PH	IDT	24+	SOP32	95		詢價
深圳市星佑電子有限公司	IDT71V124SA12Y	IDT	05+	原廠原裝	4611	只做全新原裝真實現(xiàn)貨供應	詢價

更多IDT71V124SA供應商更新時間2024-11-14 14:00:00

詳細參數(shù)

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