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IDT71V35761YSA200BG

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761YSA200BGI

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761YSA200BQ

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761YSA200BQI

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761YSA200PF

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761YSA200PFI

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

詳細(xì)參數(shù)

  • 型號(hào)：

    IDT71V35761YSA200BG

  • 功能描述：

    IC SRAM 4MBIT 200MHZ 119BGA

  • RoHS：

    否

  • 類別：

    集成電路(IC) >> 存儲(chǔ)器

  • 系列：

    -

  • 標(biāo)準(zhǔn)包裝：

    2,000

  • 系列：

    MoBL® 格式 -

  • 存儲(chǔ)器：

    RAM

  • 存儲(chǔ)器類型：

    SRAM - 異步

  • 存儲(chǔ)容量：

    16M（2M x 8，1M x 16）

  • 速度：

    45ns

  • 接口：

    并聯(lián)

  • 電源電壓：

    2.2 V ~ 3.6 V

  • 工作溫度：

    -40°C ~ 85°C

  • 封裝/外殼：

    48-VFBGA

  • 供應(yīng)商設(shè)備封裝：

    48-VFBGA（6x8）

  • 包裝：

    帶卷(TR)

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IDT
23+
BGA
1002
特價(jià)庫存
 詢價(jià)
IDT
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IDT
23+
BGA
8659
原裝公司現(xiàn)貨!原裝正品價(jià)格優(yōu)勢.
 詢價(jià)
IDT
23+
NA
1218
原裝正品代理渠道價(jià)格優(yōu)勢
 詢價(jià)
IDT
24+
119-BGA
4688
原裝現(xiàn)貨
 詢價(jià)
IDT
23+
BGA
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
 詢價(jià)
IDT
24+
QFP
6500
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
 詢價(jià)
IDT
23+
165-CABGA(13x15)
71890
專業(yè)分銷產(chǎn)品!原裝正品!價(jià)格優(yōu)勢!
 詢價(jià)
IDT, Integrated Device Technol
21+
64-TBGA
5280
進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價(jià)格(誠信經(jīng)營
 詢價(jià)
IDT, Integrated Device Technol
24+
165-CABGA(13x15)
56200
一級(jí)代理/放心采購
 詢價(jià)
更多IDT71V35761YSA200BG供應(yīng)商 更新時(shí)間2025-2-1 14:02:00

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