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首頁 >IDT71V424L10Y>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IDT71V424L10Y	文件：19.28 Kbytes Page：9 Pages	3.3V CMOS STATIC RAM 4 MEG (512K x 8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424L10Y	文件：100 bytes Page：1 Pages	包裝：卷帶（TR）封裝/外殼：36-BSOJ（0.400"，10.16mm 寬）類別：集成電路（IC）存儲器描述：IC SRAM 4MBIT PARALLEL 36SOJ	Renesas Electronics America Inc Renesas Electronics America Inc	Renesas Electronics America Inc
IDT71V424L10YG	文件：19.28 Kbytes Page：9 Pages	3.3V CMOS STATIC RAM 4 MEG (512K x 8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424L10YGI	文件：19.28 Kbytes Page：9 Pages	3.3V CMOS STATIC RAM 4 MEG (512K x 8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424L10YI	文件：19.28 Kbytes Page：9 Pages	3.3V CMOS STATIC RAM 4 MEG (512K x 8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424L10YI	文件：100 bytes Page：1 Pages	包裝：卷帶（TR）封裝/外殼：36-BSOJ（0.400"，10.16mm 寬）類別：集成電路（IC）存儲器描述：IC SRAM 4MBIT PARALLEL 36SOJ	Renesas Electronics America Inc Renesas Electronics America Inc	Renesas Electronics America Inc
IDT71V424L10YI8	文件：100 bytes Page：1 Pages	包裝：卷帶（TR）封裝/外殼：36-BSOJ（0.400"，10.16mm 寬）類別：集成電路（IC）存儲器描述：IC SRAM 4MBIT PARALLEL 36SOJ	Renesas Electronics America Inc Renesas Electronics America Inc	Renesas Electronics America Inc
71V424L10PHG	文件：189.42 Kbytes Page：11 Pages	3.3VCMOSStaticRAM4Meg(512Kx8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V424L10PHG	文件：72.68 Kbytes Page：9 Pages	3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
71V424L10PHGI	文件：72.68 Kbytes Page：9 Pages	3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
71V424L10PHGI	文件：189.42 Kbytes Page：11 Pages	3.3VCMOSStaticRAM4Meg(512Kx8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V424L10YG	文件：72.68 Kbytes Page：9 Pages	3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
71V424L10YG	文件：189.42 Kbytes Page：11 Pages	3.3VCMOSStaticRAM4Meg(512Kx8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V424L10YGI	文件：189.42 Kbytes Page：11 Pages	3.3VCMOSStaticRAM4Meg(512Kx8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V424L10YGI	文件：72.68 Kbytes Page：9 Pages	3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424L10PH	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424L10PHG	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424L10PHGI	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424L10PHI	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT

產(chǎn)品屬性

產(chǎn)品編號：
IDT71V424L10Y
制造商：
Renesas Electronics America Inc
類別：
集成電路（IC） > 存儲器
包裝：
卷帶（TR）
存儲器類型：
易失
存儲器格式：
SRAM
技術(shù)：
SRAM - 異步
存儲容量：
4Mb（512K x 8）
存儲器接口：
并聯(lián)
寫周期時間 - 字，頁：
10ns
電壓 - 供電：
3V ~ 3.6V
工作溫度：
0°C ~ 70°C（TA）
安裝類型：
表面貼裝型
封裝/外殼：
36-BSOJ（0.400"，10.16mm 寬）
供應(yīng)商器件封裝：
36-SOJ
描述：
IC SRAM 4MBIT PARALLEL 36SOJ

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市昌和盛利電子有限公司	IDT71V424L10Y	IDT	23+	36PIN400MILS	9526		詢價
深圳市卓越微芯電子有限公司	IDT71V424L10Y	IDT	2020+	SOJ	2106	百分百原裝正品真實(shí)公司現(xiàn)貨庫存本公司只做原裝可	詢價
深圳市博浩通科技有限公司	IDT71V424L10Y	IDT	23+	原廠原裝	7628	特價庫存	詢價
深圳市毅創(chuàng)騰電子科技有限公司	IDT71V424L10Y	IDT	23+	36-SOJ	73390	專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢!	詢價
深圳市永貝爾科技有限公司	IDT71V424L10Y	IDT	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價
上海市鑫鴻達(dá)電子	IDT71V424L10Y	IDT	2022+		29	全新原裝貨期兩周	詢價
瀚佳科技(深圳)有限公司	IDT71V424L10Y	IDT, Integrated Device Technol	24+	36-SOJ	56200	一級代理/放心采購	詢價
深圳市科雨電子有限公司	IDT71V424L10Y	IDT	20+	SOP-36	1001	就找我吧!--邀您體驗(yàn)愉快問購元件!	詢價
深圳市芯誠實(shí)創(chuàng)科技有限公司	IDT71V424L10Y	IDT	2022	TSOP	1950	全新原裝現(xiàn)貨	詢價
深圳市威爾健半導(dǎo)體有限公司	IDT71V424L10Y	IDT	23+	SOJ36	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價

更多IDT71V424L10Y供應(yīng)商更新時間2025-1-1 9:00:00

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